74V1G70STR数据表ic资料原装现货意法半导体-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
74V1G70STR	文件：108.53 Kbytes Page：9 Pages	SINGLE BUFFER 文件：108.53 Kbytes 页数：9 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
74V1G70STR	文件：100 bytes Page：1 Pages	Package：SC-74A，SOT-753；包装：卷带（TR）类别：集成电路（IC）缓冲器，驱动器，接收器，收发器描述：IC BUF NON-INVERT 5.5V SOT23-5	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
74V1G70	文件：108.53 Kbytes Page：9 Pages	SINGLE BUFFER 文件：108.53 Kbytes 页数：9 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
74V1G70	文件：48.45 Kbytes Page：7 Pages	SINGLE BUFFER DESCRIPTION The 74V1G70 is an advanced high-speed CMOS SINGLE BUFFER fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. ■ HIGH SPEED: tPD = 3.6ns (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION: ICC = 1µA(MAX.) at TA=25°C ■ HIGH NOISE IMMUNITY: VN 文件：48.45 Kbytes 页数：7 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
74V1G70C	文件：48.45 Kbytes Page：7 Pages	SINGLE BUFFER DESCRIPTION The 74V1G70 is an advanced high-speed CMOS SINGLE BUFFER fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. ■ HIGH SPEED: tPD = 3.6ns (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION: ICC = 1µA(MAX.) at TA=25°C ■ HIGH NOISE IMMUNITY: VN 文件：48.45 Kbytes 页数：7 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS

更多74V1G70STR供应商更新时间2026-1-22 11:05:00