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74V1G08

SINGLE 2-INPUT AND GATE

DESCRIPTION The 74V1G08 is an advanced high-speed CMOS SINGLE 2-INPUT AND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. ■ HIGH SPEED: tPD = 3.8ns (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION: ICC = 1µA(MAX.) at TA=25°C ■ HIGH NOISE IMMUNIT

文件:49 Kbytes 页数:7 Pages

STMICROELECTRONICS

意法半导体

74V1G08

SINGLE 2-INPUT AND GATE

DESCRIPTION The 74V1G08 is an advanced high-speed CMOS SINGLE 2-INPUT AND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. ■ HIGH SPEED: tPD = 3.8ns (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION: ICC = 1µA(MAX.) at TA=25°C ■ HIGH NOISE IMMUNIT

文件:202.67 Kbytes 页数:9 Pages

STMICROELECTRONICS

意法半导体

74V1G08

SINGLE 2-INPUT AND GATE

ST

意法半导体

74V1G08C

SINGLE 2-INPUT AND GATE

DESCRIPTION The 74V1G08 is an advanced high-speed CMOS SINGLE 2-INPUT AND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. ■ HIGH SPEED: tPD = 3.8ns (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION: ICC = 1µA(MAX.) at TA=25°C ■ HIGH NOISE IMMUNIT

文件:49 Kbytes 页数:7 Pages

STMICROELECTRONICS

意法半导体

74V1G08CTR

SINGLE 2-INPUT AND GATE

DESCRIPTION The 74V1G08 is an advanced high-speed CMOS SINGLE 2-INPUT AND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. ■ HIGH SPEED: tPD = 3.8ns (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION: ICC = 1µA(MAX.) at TA=25°C ■ HIGH NOISE IMMUNIT

文件:202.67 Kbytes 页数:9 Pages

STMICROELECTRONICS

意法半导体

74V1G08S

SINGLE 2-INPUT AND GATE

DESCRIPTION The 74V1G08 is an advanced high-speed CMOS SINGLE 2-INPUT AND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. ■ HIGH SPEED: tPD = 3.8ns (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION: ICC = 1µA(MAX.) at TA=25°C ■ HIGH NOISE IMMUNIT

文件:49 Kbytes 页数:7 Pages

STMICROELECTRONICS

意法半导体

74V1G08STR

SINGLE 2-INPUT AND GATE

DESCRIPTION The 74V1G08 is an advanced high-speed CMOS SINGLE 2-INPUT AND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. ■ HIGH SPEED: tPD = 3.8ns (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION: ICC = 1µA(MAX.) at TA=25°C ■ HIGH NOISE IMMUNIT

文件:202.67 Kbytes 页数:9 Pages

STMICROELECTRONICS

意法半导体

74V1G08C

SINGLE 2-INPUT AND GATE

ST

意法半导体

74V1G08CTR

Package:5-TSSOP,SC-70-5,SOT-353;包装:管件 类别:集成电路(IC) 门和反相器 描述:IC GATE AND 1CH 2-INP SOT323-5

STMICROELECTRONICS

意法半导体

74V1G08STR

Package:SC-74A,SOT-753;包装:卷带(TR)剪切带(CT) 类别:集成电路(IC) 门和反相器 描述:IC GATE AND 1CH 2-INP SOT23-5

STMICROELECTRONICS

意法半导体

详细参数

  • 型号:

    74V1G08

  • 制造商:

    STMICROELECTRONICS

  • 制造商全称:

    STMicroelectronics

  • 功能描述:

    SINGLE 2-INPUT AND GATE

供应商型号品牌批号封装库存备注价格
24+
5000
公司存货
询价
ST
24+
SOT23-5L
6980
原装现货,可开13%税票
询价
ST
24+
SOT23-5
25843
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
ST
25+
SOT23-5
2655
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
TYCO
23+
CONN
5000
原装正品,假一罚十
询价
ST
17+
SOT353
6200
100%原装正品现货
询价
ST
1728+
SC70-5
5000
只做原装进口,假一罚十
询价
ST
07+PB
SOT23-5
2609
原装现货海量库存欢迎咨询
询价
ST
25+
SOT-23-5W
2987
只售原装自家现货!诚信经营!欢迎来电!
询价
ST
23+
NA
31066
专做原装正品,假一罚百!
询价
更多74V1G08供应商 更新时间2025-10-11 16:01:00