丝印：AA；Package：SOT-353；2-input NAND gate

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PHI

PHI

丝印：AA；Package：SOT353-1；2-input NAND gate

文件：709.63 Kbytes 页数：12 Pages

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2-input NAND gate

文件：709.63 Kbytes 页数：12 Pages

NEXPERIA

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SINGLE 2 INPUT POSITIVE NAND GATE

文件：180.89 Kbytes 页数：8 Pages

DIODES

美台半导体

SINGLE 2 INPUT POSITIVE NAND GATE

文件：180.89 Kbytes 页数：8 Pages

DIODES

美台半导体

SINGLE 2 INPUT POSITIVE NAND GATE

文件：180.89 Kbytes 页数：8 Pages

DIODES

美台半导体

SINGLE 2 INPUT POSITIVE NAND GATE

文件：180.89 Kbytes 页数：8 Pages

DIODES

美台半导体

2-input NAND gate

74AHC1G00-Q100 and 74AHCT1G00-Q100 are high-speed Si-gate CMOS devices. They provide a 2-input NAND function.\n The AHC device has CMOS input switching levels and supply voltage range 2 V to 5.5 V.\n The AHCT device has TTL input switching levels and supply voltage range 4.5 V to 5.5 V.\n T • Automotive product qualification in accordance with AEC-Q100 (Grade 1)• Specified from -40 °C to +85 °C and from -40 °C to +125 °C\n\n• Symmetrical output impedance\n• High noise immunity\n• Low power dissipation\n• Balanced propagation delays\n• SOT353-1 and SOT753 package options\n• ESD protecti;

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2-input NAND gate

74AHC1G00 and 74AHCT1G00 are high-speed Si-gate CMOS devices. They provide a 2-input NAND function.\n The AHC device has CMOS input switching levels and supply voltage range 2 V to 5.5 V.\n The AHCT device has TTL input switching levels and supply voltage range 4.5 V to 5.5 V. • Symmetrical output impedance\n• High noise immunity\n• Low power dissipation\n• Balanced propagation delays\n• SOT353-1 and SOT753 package options\n• ESD protection:• HBM JESD22-A114E: exceeds 2000 V\n• MM JESD22-A115-A: exceeds 200 V\n• CDM JESD22-C101C: exceeds 1000 V\n\n• Specified from -40 °C ;

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Package：SC-74A，SOT-753；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：集成电路（IC） 门和反相器 描述：IC GATE NAND 1CH 2-INP SC74A

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