SINGLE 2-INPUT POSITIVE NAND GATE

Features  Grade 1 Ambient Temperature Operation: -40°C to +125°C  Supply Voltage Range from 2.0V to 5.5V  ±8mA Output Drive at 4.5V  CMOS Low-Power Consumption  Schmitt Trigger Action at All Inputs Make the Circuit Tolerant for Slower Input Rise and Fall Time  Inputs not Limited by VC

文件：523.5 Kbytes 页数：9 Pages

DIODES

美台半导体

2-input NAND gate

1. General description The 74AHC1G00-Q100; 74AHCT1G00-Q100 is a single 2-input NAND gate. Inputs are overvoltage tolerant. This feature allows the use of these devices as translators in mixed voltage environments. This product has been qualified to the Automotive Electronics Council (AEC) stand

文件：233.59 Kbytes 页数：12 Pages

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安世

2-input NAND gate

1. General description The 74AHC1G00-Q100; 74AHCT1G00-Q100 is a single 2-input NAND gate. Inputs are overvoltage tolerant. This feature allows the use of these devices as translators in mixed voltage environments. This product has been qualified to the Automotive Electronics Council (AEC) stand

文件：233.59 Kbytes 页数：12 Pages

NEXPERIA

安世

丝印：SE；Package：SOT353；SINGLE 2-INPUT POSITIVE NAND GATE

Features  Grade 1 Ambient Temperature Operation: -40°C to +125°C  Supply Voltage Range from 2.0V to 5.5V  ±8mA Output Drive at 4.5V  CMOS Low-Power Consumption  Schmitt Trigger Action at All Inputs Make the Circuit Tolerant for Slower Input Rise and Fall Time  Inputs not Limited by VC

文件：523.5 Kbytes 页数：9 Pages

DIODES

美台半导体

丝印：W5；Package：SOT25；SINGLE 2-INPUT POSITIVE NAND GATE

Features  Grade 1 Ambient Temperature Operation: -40°C to +125°C  Supply Voltage Range from 2.0V to 5.5V  ±8mA Output Drive at 4.5V  CMOS Low-Power Consumption  Schmitt Trigger Action at All Inputs Make the Circuit Tolerant for Slower Input Rise and Fall Time  Inputs not Limited by VC

文件：523.5 Kbytes 页数：9 Pages

DIODES

美台半导体

Single 2-Input NAND Gate

Features + Operation Voltage Range: 2~5.5V « Low Power Dissipation: Icc=1.0pA (Max) + High Speed: tro=4.3ns (Typ) * SOT23-5 Package Available + SOT353 Package Available « ESD Protection Exceeds JESD 22 ~2000-V Human-Body Model (A114-A) ~1000-V Charged-Device Model (C101)

文件：1.78962 Mbytes 页数：6 Pages

TECHPUBLIC

台舟电子

Single 2-Input NAND Gate

Features + Operation Voltage Range: 2~5.5V « Low Power Dissipation: Icc=1.0pA (Max) + High Speed: tro=4.3ns (Typ) * SOT23-5 Package Available + SOT353 Package Available « ESD Protection Exceeds JESD 22 ~2000-V Human-Body Model (A114-A) ~1000-V Charged-Device Model (C101)

文件：1.78962 Mbytes 页数：6 Pages

TECHPUBLIC

台舟电子

SINGLE 2 INPUT POSITIVE NAND GATE

文件：180.89 Kbytes 页数：8 Pages

DIODES

美台半导体

丝印：A00；Package：SOT-753；2-input NAND gate

文件：74.04 Kbytes 页数：16 Pages

PHI

PHI

丝印：A00；Package：SOT753；2-input NAND gate

文件：709.63 Kbytes 页数：12 Pages

NEXPERIA

安世