| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
71V124 | 3.3V 128K x 8 Asynchronous Static RAM Center Power & Ground Pinout The 71V124 3.3V CMOS SRAM is organized as 128K x 8. The JEDEC center power/GND pinout reduces noise generation and improves system performance. All bidirectional inputs and outputs of the 71V124 are LVTTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is u JEDEC revolutionary pinout (center power/GND) for reduced noise\nEqual access and cycle times – Commercial: 10/12/15/20ns – Industrial: 10/12/15/20ns\nOne Chip Select plus one Output Enable pin\nInputs and outputs are LVTTL-compatible\nSingle 3.3V supply\nLow power consumption via chip deselect\nAva; | Renesas 瑞萨 | Renesas | |
3.3V CMOS Static RAM1 Meg (128K x 8-Bit) Center Power & Ground Pinout Features ◆ 128K x 8 advanced high-speed CMOS static RAM ◆ JEDEC revolutionary pinout (center power/GND) for reduced noise ◆ Equal access and cycle times – Commercial: 10/12/15ns – Industrial: 10/12/15ns ◆ One Chip Select plus one Output Enable pin ◆ Inputs and outputs are LVTTL-compatible 文件:192.06 Kbytes 页数:9 Pages | RENESAS 瑞萨 | RENESAS | ||
3.3V CMOS Static RAM1 Meg (128K x 8-Bit) Center Power & Ground Pinout Features ◆ 128K x 8 advanced high-speed CMOS static RAM ◆ JEDEC revolutionary pinout (center power/GND) for reduced noise ◆ Equal access and cycle times – Commercial: 10/12/15ns – Industrial: 10/12/15ns ◆ One Chip Select plus one Output Enable pin ◆ Inputs and outputs are LVTTL-compatible 文件:192.06 Kbytes 页数:9 Pages | RENESAS 瑞萨 | RENESAS | ||
3.3V CMOS Static RAM1 Meg (128K x 8-Bit) Center Power & Ground Pinout Features ◆ 128K x 8 advanced high-speed CMOS static RAM ◆ JEDEC revolutionary pinout (center power/GND) for reduced noise ◆ Equal access and cycle times – Commercial: 10/12/15ns – Industrial: 10/12/15ns ◆ One Chip Select plus one Output Enable pin ◆ Inputs and outputs are LVTTL-compatible 文件:192.06 Kbytes 页数:9 Pages | RENESAS 瑞萨 | RENESAS | ||
3.3V CMOS Static RAM1 Meg (128K x 8-Bit) Center Power & Ground Pinout Features ◆ 128K x 8 advanced high-speed CMOS static RAM ◆ JEDEC revolutionary pinout (center power/GND) for reduced noise ◆ Equal access and cycle times – Commercial: 10/12/15ns – Industrial: 10/12/15ns ◆ One Chip Select plus one Output Enable pin ◆ Inputs and outputs are LVTTL-compatible 文件:192.06 Kbytes 页数:9 Pages | RENESAS 瑞萨 | RENESAS | ||
3.3V CMOS Static RAM1 Meg (128K x 8-Bit) Center Power & Ground Pinout Features ◆ 128K x 8 advanced high-speed CMOS static RAM ◆ JEDEC revolutionary pinout (center power/GND) for reduced noise ◆ Equal access and cycle times – Commercial: 10/12/15ns – Industrial: 10/12/15ns ◆ One Chip Select plus one Output Enable pin ◆ Inputs and outputs are LVTTL-compatible 文件:192.06 Kbytes 页数:9 Pages | RENESAS 瑞萨 | RENESAS | ||
3.3V CMOS Static RAM1 Meg (128K x 8-Bit) Center Power & Ground Pinout Features ◆ 128K x 8 advanced high-speed CMOS static RAM ◆ JEDEC revolutionary pinout (center power/GND) for reduced noise ◆ Equal access and cycle times – Commercial: 10/12/15ns – Industrial: 10/12/15ns ◆ One Chip Select plus one Output Enable pin ◆ Inputs and outputs are LVTTL-compatible 文件:192.06 Kbytes 页数:9 Pages | RENESAS 瑞萨 | RENESAS | ||
3.3V CMOS Static RAM1 Meg (128K x 8-Bit) Center Power & Ground Pinout Features ◆ 128K x 8 advanced high-speed CMOS static RAM ◆ JEDEC revolutionary pinout (center power/GND) for reduced noise ◆ Equal access and cycle times – Commercial: 10/12/15ns – Industrial: 10/12/15ns ◆ One Chip Select plus one Output Enable pin ◆ Inputs and outputs are LVTTL-compatible 文件:192.06 Kbytes 页数:9 Pages | RENESAS 瑞萨 | RENESAS | ||
3.3V CMOS Static RAM1 Meg (128K x 8-Bit) Center Power & Ground Pinout Features ◆ 128K x 8 advanced high-speed CMOS static RAM ◆ JEDEC revolutionary pinout (center power/GND) for reduced noise ◆ Equal access and cycle times – Commercial: 10/12/15ns – Industrial: 10/12/15ns ◆ One Chip Select plus one Output Enable pin ◆ Inputs and outputs are LVTTL-compatible 文件:192.06 Kbytes 页数:9 Pages | RENESAS 瑞萨 | RENESAS | ||
3.3V CMOS Static RAM1 Meg (128K x 8-Bit) Center Power & Ground Pinout Features ◆ 128K x 8 advanced high-speed CMOS static RAM ◆ JEDEC revolutionary pinout (center power/GND) for reduced noise ◆ Equal access and cycle times – Commercial: 10/12/15ns – Industrial: 10/12/15ns ◆ One Chip Select plus one Output Enable pin ◆ Inputs and outputs are LVTTL-compatible 文件:192.06 Kbytes 页数:9 Pages | RENESAS 瑞萨 | RENESAS |
技术参数
- Density (Kb):
1024
- Bus Width (bits):
8
- Core Voltage (V):
3.3
- Pkg. Type:
SOJ
- Organization:
128K x 8
- I/O Voltage (V):
3.3
- Access Time (ns):
10
- Temp. Range:
-40 to 85°C
- Architecture:
Asynchronous
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IDT |
24+ |
SOJ |
10 |
询价 | |||
2602+ |
25843 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
询价 | ||||
IDT |
26+ |
PLCC-68 |
9526 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
询价 | ||
IDT |
25+ |
TSSOP-14 |
8000 |
原厂原包装,终端BOM表可配单 |
询价 | ||
IDT |
00/01+ |
ZIP-32 |
56 |
全新原装100真实现货供应 |
询价 | ||
IDT |
25+ |
SOJ |
1500 |
强调现货,随时查询! |
询价 | ||
IDT |
16+ |
NA |
8800 |
原装现货,货真价优 |
询价 | ||
IDT |
2005 |
SOP32 |
1264 |
原装现货海量库存欢迎咨询 |
询价 | ||
IDT |
2018+ |
26976 |
代理原装现货/特价热卖! |
询价 | |||
IDT |
16+ |
7917 |
进口原装正品 |
询价 |
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