70T653M中文资料下载行情报价瑞萨RENESAS-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
70T653M	文件：509.3 Kbytes Page：26 Pages	HIGH-SPEED 2.5V 512K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE Features ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location ◆ High-speed access – Commercial: 10/12/15ns (max.) – Industrial: 12ns (max.) ◆ RapidWrite Mode simplifies high-speed consecutive write cycles ◆ Dual chip enables allow for depth expansion wi 文件：509.3 Kbytes 页数：26 Pages	RENESAS 瑞萨	RENESAS
70T653MS10BC	文件：509.3 Kbytes Page：26 Pages	HIGH-SPEED 2.5V 512K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE Features ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location ◆ High-speed access – Commercial: 10/12/15ns (max.) – Industrial: 12ns (max.) ◆ RapidWrite Mode simplifies high-speed consecutive write cycles ◆ Dual chip enables allow for depth expansion wi 文件：509.3 Kbytes 页数：26 Pages	RENESAS 瑞萨	RENESAS
70T653MS10BC8	文件：509.3 Kbytes Page：26 Pages	HIGH-SPEED 2.5V 512K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE Features ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location ◆ High-speed access – Commercial: 10/12/15ns (max.) – Industrial: 12ns (max.) ◆ RapidWrite Mode simplifies high-speed consecutive write cycles ◆ Dual chip enables allow for depth expansion wi 文件：509.3 Kbytes 页数：26 Pages	RENESAS 瑞萨	RENESAS
70T653MS10BCG	文件：509.3 Kbytes Page：26 Pages	HIGH-SPEED 2.5V 512K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE Features ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location ◆ High-speed access – Commercial: 10/12/15ns (max.) – Industrial: 12ns (max.) ◆ RapidWrite Mode simplifies high-speed consecutive write cycles ◆ Dual chip enables allow for depth expansion wi 文件：509.3 Kbytes 页数：26 Pages	RENESAS 瑞萨	RENESAS
70T653MS12BC	文件：509.3 Kbytes Page：26 Pages	HIGH-SPEED 2.5V 512K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE Features ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location ◆ High-speed access – Commercial: 10/12/15ns (max.) – Industrial: 12ns (max.) ◆ RapidWrite Mode simplifies high-speed consecutive write cycles ◆ Dual chip enables allow for depth expansion wi 文件：509.3 Kbytes 页数：26 Pages	RENESAS 瑞萨	RENESAS
70T653MS12BC8	文件：509.3 Kbytes Page：26 Pages	HIGH-SPEED 2.5V 512K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE Features ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location ◆ High-speed access – Commercial: 10/12/15ns (max.) – Industrial: 12ns (max.) ◆ RapidWrite Mode simplifies high-speed consecutive write cycles ◆ Dual chip enables allow for depth expansion wi 文件：509.3 Kbytes 页数：26 Pages	RENESAS 瑞萨	RENESAS
70T653MS12BCGI	文件：509.3 Kbytes Page：26 Pages	HIGH-SPEED 2.5V 512K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE Features ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location ◆ High-speed access – Commercial: 10/12/15ns (max.) – Industrial: 12ns (max.) ◆ RapidWrite Mode simplifies high-speed consecutive write cycles ◆ Dual chip enables allow for depth expansion wi 文件：509.3 Kbytes 页数：26 Pages	RENESAS 瑞萨	RENESAS
70T653MS12BCI	文件：509.3 Kbytes Page：26 Pages	HIGH-SPEED 2.5V 512K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE Features ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location ◆ High-speed access – Commercial: 10/12/15ns (max.) – Industrial: 12ns (max.) ◆ RapidWrite Mode simplifies high-speed consecutive write cycles ◆ Dual chip enables allow for depth expansion wi 文件：509.3 Kbytes 页数：26 Pages	RENESAS 瑞萨	RENESAS
70T653MS12BCI8	文件：509.3 Kbytes Page：26 Pages	HIGH-SPEED 2.5V 512K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE Features ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location ◆ High-speed access – Commercial: 10/12/15ns (max.) – Industrial: 12ns (max.) ◆ RapidWrite Mode simplifies high-speed consecutive write cycles ◆ Dual chip enables allow for depth expansion wi 文件：509.3 Kbytes 页数：26 Pages	RENESAS 瑞萨	RENESAS
70T653MS15BC	文件：509.3 Kbytes Page：26 Pages	HIGH-SPEED 2.5V 512K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE Features ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location ◆ High-speed access – Commercial: 10/12/15ns (max.) – Industrial: 12ns (max.) ◆ RapidWrite Mode simplifies high-speed consecutive write cycles ◆ Dual chip enables allow for depth expansion wi 文件：509.3 Kbytes 页数：26 Pages	RENESAS 瑞萨	RENESAS

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市福田区亿兴成电子商行	70T653M	IDT			10		询价
深圳市星辰微电科技有限公司	70T653M	IDT/RENESAS	25+	BC256, BCG256	24500	瑞萨全系列在售	询价
深圳市斌腾达科技有限公司	70T653MS12BCGI	IDT, Integrated Device Technol	21+	256-LBGA	5280	进口原装!长期供应!绝对优势价格(诚信经营	询价
瀚佳科技(深圳)有限公司	70T653MS12BCGI	IDT, Integrated Device Technol	24+	256-CABGA(17x17)	56200	一级代理/放心采购	询价
深圳市艾宇欣科技有限公司	70T653MS15BC	IDT	1931+	N/A	1186	加我qq或微信，了解更多详细信息,体验一站式购物	询价
艾睿（深圳）半导体有限公司	70T653MS10BC8	RENESAS(瑞萨)/IDT	2447	CABGA-256(17x17)	315000	1000个/圆盘一级代理专营品牌!原装正品,优势现货,	询价
深圳市科雨电子有限公司	70T653MS12BCGI	IDT	25+	BGA-256	12	就找我吧!--邀您体验愉快问购元件!	询价
深圳市莱克讯科技有限公司	70T653MS10BC	HISILCOM		BGAQFP	1680	只做进口原装!假一罚十!绝对有货!	询价
讯运(深圳/上海)电子有限公司	70T653MS10BCG	RENESAS(瑞萨)/IDT	2021+	CABGA-256(17x17)	499		询价
深圳市易讯博科技有限公司	70T653MS15BC	IDT	22+	NA	1186	加我QQ或微信咨询更多详细信息,	询价

更多70T653M供应商更新时间2026-1-29 8:01:00

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