Features

◆ True Dual-Port memory cells which allow simultaneous

access of the same memory location

◆ High-speed access

– Commercial: 10/12/15ns (max.)

– Industrial: 12ns (max.)

◆ RapidWrite Mode simplifies high-speed consecutive write

cycles

◆ Dual chip enables allow for depth expansion without

external logic

◆ IDT70T653M easily expands data bus width to 72 bits or

more using the Busy Input when cascading more than one

device

◆ Busy input for port contention management

◆ Interrupt Flags

◆ Full on-chip hardware support of semaphore signaling

between ports

◆ Fully asynchronous operation from either port

◆ Separate byte controls for multiplexed bus and bus

matching compatibility

◆ Sleep Mode Inputs on both ports

◆ Single 2.5V (±100mV) power supply for core

◆ LVTTL-compatible, selectable 3.3V (±150mV)/2.5V (±100mV)

power supply for I/Os and control signals on each port

◆ Includes JTAG functionality

◆ Available in a 256-ball Ball Grid Array

◆ Industrial temperature range (–40°C to +85°C) is available

for selected speeds

◆ Green parts available, see ordering information

70T653MS12BCGI属于集成电路（IC） > 存储器。瑞萨科技有限公司制造生产的70T653MS12BCGI存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。