丝印：6Y；Package：SC-76；Low-current voltage regulator diodes

1. General description Low-current voltage regulator diodes in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Total power dissipation: ≤ 300 mW • Tolerance series: approximately ± 5 • Working voltage range: nominal 1.8 V to 10 V • Specifie

文件：234.92 Kbytes 页数：10 Pages

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丝印：6Y；Package：SOD323；Low-current voltage regulator diodes

1. General description Low-current voltage regulator diodes in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Total power dissipation: ≤ 300 mW • Tolerance series: approximately ± 5 • Working voltage range: nominal 1.8 V to 10 V • Specifie

文件：235.89 Kbytes 页数：10 Pages

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丝印：6Y；Package：X2QFN；Low Voltage 5-Bit Self-Timed, Single-Wire Output Expander

1FEATURES • Operating Power-Supply Voltage Range of 1.65 V to 3.6 V • Five Independent Push-Pull Outputs • Single Input (DIN) Controls State of All Outputs • High-Current Drive Outputs Maximum Capability for Directly Driving LEDs • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II

文件：1.0621 Mbytes 页数：14 Pages

TI

德州仪器

丝印：6Y；Package：X2QFN；Low Voltage 5-Bit Self-Timed, Single-Wire Output Expander

1FEATURES • Operating Power-Supply Voltage Range of 1.65 V to 3.6 V • Five Independent Push-Pull Outputs • Single Input (DIN) Controls State of All Outputs • High-Current Drive Outputs Maximum Capability for Directly Driving LEDs • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II

文件：1.0621 Mbytes 页数：14 Pages

TI

德州仪器

丝印：6Y；Package：SOT-233L；P-Channel Switch

文件：341.77 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

丝印：6Y；Package：SOD-123FL；SURFACE MOUNT SILICON ZENER DIODES

文件：131.74 Kbytes 页数：2 Pages

EIC

丝印：6Y1030P；Package：LFPAK56；30 V, P-channel Trench MOSFET

1. General description P-channel enhancement mode MOSFET in an LFPAK56 (Power SO8) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. This product has been designed and qualified to AEC-Q101 standard for use in high-performance automotive applications such as reverse

文件：259.959 Kbytes 页数：14 Pages

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丝印：6Y1440P；Package：LFPAK56；40 V, P-channel Trench MOSFET

1. General description P-channel enhancement mode MOSFET in an LFPAK56 (Power SO8) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. This product has been designed and qualified to AEC-Q101 standard for use in high-performance automotive applications such as reverse

文件：271.14 Kbytes 页数：13 Pages

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丝印：6Y1930P；Package：LFPAK56；30 V, P-channel Trench MOSFET

1. General description P-channel enhancement mode MOSFET in an LFPAK56 (Power SO8) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. This product has been designed and qualified to AEC-Q101 standard for use in high-performance automotive applications such as reverse

文件：263.48 Kbytes 页数：14 Pages

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丝印：6Y2440P；Package：LFPAK56；40 V, P-channel Trench MOSFET

1. General description P-channel enhancement mode MOSFET in an LFPAK56 (Power SO8) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. This product has been designed and qualified to AEC-Q101 standard for use in high-performance automotive applications such as reverse

文件：260.89 Kbytes 页数：13 Pages

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