BUK6Y19-30P规格书应用电路批发供应安世-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
BUK6Y19-30P	文件：263.48 Kbytes Page：14 Pages	丝印：6Y1930P；Package：LFPAK56；30 V, P-channel Trench MOSFET 1. General description P-channel enhancement mode MOSFET in an LFPAK56 (Power SO8) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. This product has been designed and qualified to AEC-Q101 standard for use in high-performance automotive applications such as reverse 文件：263.48 Kbytes 页数：14 Pages	NEXPERIA 安世	NEXPERIA
BUK6Y19-30P	文件：11.62183 Mbytes Page：234 Pages	Discrete and MOSFET components, analog & logic ICs 文件：11.62183 Mbytes 页数：234 Pages	NEXPERIA 安世	NEXPERIA
BUK6Y19-30P	文件：300 bytes Page：1 Pages	30 V, P-channel Trench MOSFET P-channel enhancement mode MOSFET in an LFPAK56 (Power SO8) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.\n This product has been designed and qualified to AEC-Q101 standard for use in high-performance automotive applications such as reverse battery protection. • High thermal power dissipation capability\n• Trench MOSFET technology\n• AEC-Q101 qualified;	Nexperia 安世	Nexperia
BUK763R1-60E	文件：0 bytes Page：0 Pages	D2PAK	NEXPERIA 安世上传：万三科技(深圳)有限公司	NEXPERIA
BUK765R0-100E,118	文件：0 bytes Page：0 Pages	D2PAK	NEXPERIA/安世上传：深圳市盈慧通电子有限公司	NEXPERIA/安世

更多BUK6Y19-30P供应商更新时间2025-12-10 13:01:00