丝印：6F；Package：SOD-123F；SILICON PLANAR ZENER DIODES

Features • Total power dissipation: max. 500 mW • Small plastic package suitable for surface mounted design • Tolerance approximately ± 5

文件：272.29 Kbytes 页数：4 Pages

SEMTECH_ELEC

先之科半导体

丝印：6F；Silicon Planar Zener Diodes

FEATURES • Total power dissipation: Max. 500mW. • Wide zener reverse voltage range 2.0V to 75V. • Small plastic package suitable for surface mounted design. • Tolerance approximately±5

文件：776.59 Kbytes 页数：2 Pages

JUXING

广东钜兴电子

丝印：6F；Package：SOT363；80 V, 100 mA NPN/NPN resistor-equipped double transistors

Features and benefits • 100 mA output current capability • High breakdown voltage • Built-in resistors • Simplifies circuit design • Reduces component count • Reduces pick and place costs • AEC-Q101 qualified

文件：299.19 Kbytes 页数：15 Pages

NEXPERIA

安世

丝印：6F；Package：SC-88；80 V, 100 mA NPN/NPN resistor-equipped double transistors

1. General description NPN/NPN Resistor-Equipped double Transistor (RET) family in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number R1 R2 Package kΩ kΩ Nexperia JEITA PNP/PNP complement: NPN/PNP complement: NHUMH11 10 10 NHUM

文件：299.22 Kbytes 页数：15 Pages

NEXPERIA

安世

丝印：6F；Package：SOT363；80 V, 100 mA NPN/NPN resistor-equipped double transistors

Features and benefits • 100 mA output current capability • High breakdown voltage • Built-in resistors • Simplifies circuit design • Reduces component count • Reduces pick and place costs • Qualified according to AEC-Q101 and recommended for use in automotive applications

文件：303.54 Kbytes 页数：15 Pages

NEXPERIA

安世

丝印：6F；Package：SOT89；60 V, 6.2 A NPN low VCEsat (BISS) transistor

Technical summary NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4041PX. Features and benefits • Very low collector-emitter saturation voltage VCEsat • High collector

文件：726.38 Kbytes 页数：14 Pages

NEXPERIA

安世

丝印：6F；Package：DFN1412D-3；50 V, 100 mA PNP resistor-equipped transistors

Features and benefits • 100 mA output current capability • Built-in resistors • Simplifies circuit design • Reduces component count • Reduces pick and place costs • Low package height of 0.5 mm • Suitable for Automatic Optical Inspection (AOI) of solder joint

文件：365.87 Kbytes 页数：20 Pages

NEXPERIA

安世

丝印：6F；Package：DFN1412D-3；50 V, 100 mA PNP resistor-equipped transistors

1. General description 100 mA PNP Resistor-Equipped Transistor (RET) family in an ultra small DFN1412D-3 (SOT8009) leadless Surface-Mounted Device (SMD) plastic package with side-wettable flanks. Table 1. Product overview Type number R1 R2 Package kΩ kΩ Nexperia JEDEC NPN complement: PDTA14

文件：365.63 Kbytes 页数：20 Pages

NEXPERIA

安世

丝印：6F；Package：SC-74；20 V, P-channel Trench MOSFET

1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface- Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Low threshold voltage • Extended temperature range Tj = 175 °C • Very fast swit

文件：286.86 Kbytes 页数：15 Pages

NEXPERIA

安世

丝印：6F；Package：SOT-23；NPN General Purpose Amplifier

文件：1.05939 Mbytes 页数：2 Pages

LUGUANG

鲁光电子