丝印：6F；Package：SOT89；60 V, 6.2 A NPN low VCEsat (BISS) transistor

Technical summary NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4041PX. Features and benefits • Very low collector-emitter saturation voltage VCEsat • High collector

文件：726.38 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

60 V, 6.2 A NPN low VCEsat (BISS) transistor

文件：254.79 Kbytes 页数：14 Pages

PHI

飞利浦

60 V, 6.2 A NPN low VCEsat (BISS) transistor

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package.\n PNP complement: PBSS4041PX. • Very low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High collector current gain (hFE) at high IC\n• High energy efficiency due to less heat generation\n• AEC-Q101 qualified\n• Smaller required Printed-Circuit Board (PCB) area than for conventiona;

Nexperia

安世

60 V, 6.2 A NPN low VCEsat transistor

NPN low VCEsat transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package.\n PNP complement: PBSS4041PX

Nexperia

安世

Package：TO-243AA；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 60V 6.2A SOT89

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司