MM1Z68

Marking：6F；Package：SOD-123F；SILICON PLANAR ZENER DIODES

Features •Totalpowerdissipation:max.500mW •Smallplasticpackagesuitableforsurfacemounteddesign •Toleranceapproximately±5

NHUMH11

Marking：6F；Package：SOT363；80 V, 100 mA NPN/NPN resistor-equipped double transistors

Featuresandbenefits •100mAoutputcurrentcapability •Highbreakdownvoltage •Built-inresistors •Simplifiescircuitdesign •Reducescomponentcount •Reducespickandplacecosts •AEC-Q101qualified

NHUMH11

Marking：6F；Package：SC-88；80 V, 100 mA NPN/NPN resistor-equipped double transistors

1.Generaldescription NPN/NPNResistor-EquippeddoubleTransistor(RET)familyinaverysmallSOT363(SC-88) Surface-MountedDevice(SMD)plasticpackage. Table1.Productoverview TypenumberR1R2Package kΩkΩNexperiaJEITA PNP/PNP complement: NPN/PNP complement: NHUMH111010NHUM

NHUMH11-Q

Marking：6F；Package：SOT363；80 V, 100 mA NPN/NPN resistor-equipped double transistors

Featuresandbenefits •100mAoutputcurrentcapability •Highbreakdownvoltage •Built-inresistors •Simplifiescircuitdesign •Reducescomponentcount •Reducespickandplacecosts •QualifiedaccordingtoAEC-Q101andrecommendedforuseinautomotiveapplications

PBSS4041NX

Marking：6F；Package：SOT89；60 V, 6.2 A NPN low VCEsat (BISS) transistor

Technicalsummary NPNlowVCEsatBreakthroughInSmallSignal(BISS)transistorinamediumpowerandflatleadSOT89(SC-62)Surface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBSS4041PX. Featuresandbenefits •Verylowcollector-emittersaturationvoltageVCEsat •Highcollector

PDTA124XQC

Marking：6F；Package：DFN1412D-3；50 V, 100 mA PNP resistor-equipped transistors

Featuresandbenefits •100mAoutputcurrentcapability •Built-inresistors •Simplifiescircuitdesign •Reducescomponentcount •Reducespickandplacecosts •Lowpackageheightof0.5mm •SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint

PDTA124XQC-Q

Marking：6F；Package：DFN1412D-3；50 V, 100 mA PNP resistor-equipped transistors

1.Generaldescription 100mAPNPResistor-EquippedTransistor(RET)familyinanultrasmallDFN1412D-3(SOT8009) leadlessSurface-MountedDevice(SMD)plasticpackagewithside-wettableflanks. Table1.Productoverview TypenumberR1R2Package kΩkΩNexperiaJEDEC NPNcomplement: PDTA14

PMN40XPEA

Marking：6F；Package：SC-74；20 V, P-channel Trench MOSFET

1.Generaldescription P-channelenhancementmodeField-EffectTransistor(FET)inasmallSOT457(SC-74)Surface- MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits •Lowthresholdvoltage •ExtendedtemperaturerangeTj=175°C •Veryfastswit

BC818-25

Marking：6F；Package：SOT-23；NPN General Purpose Amplifier

BZT52C68

Marking：6F；Package：SOD-123；SURFACE MOUNT ZENER DIODE