丝印：68N60M6；Package：TO-247；N-channel 600 V, 35 mΩ typ., 63 A MDmesh™ M6 Power MOSFET in a TO-247 package

Features • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100 avalanche tested • Zener-protected Applications • Switching applications • LLC converters • Boost PFC converters Description The new MDmesh™ M6 technology incorporat

文件：474.44 Kbytes 页数：13 Pages

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丝印：68N60M6；Package：TO247-4；N-channel 600 V, 35 mΩ typ., 63 A MDmesh™ M6 Power MOSFET in TO247-4 package

Features • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100 avalanche tested • Zener-protected • Excellent switching performance thanks to the extra driving source pin Applications • Switching applications • LLC converters • Boo

文件：280.75 Kbytes 页数：12 Pages

STMICROELECTRONICS

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