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STW68N60M6

Marking:68N60M6;Package:TO-247;N-channel 600 V, 35 mΩ typ., 63 A MDmesh™ M6 Power MOSFET in a TO-247 package

Features •Reducedswitchinglosses •LowerRDS(on)perareavspreviousgeneration •Lowgateinputresistance •100avalanchetested •Zener-protected Applications •Switchingapplications •LLCconverters •BoostPFCconverters Description ThenewMDmesh™M6technologyincorporat

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STW68N60M6-4

Marking:68N60M6;Package:TO247-4;N-channel 600 V, 35 mΩ typ., 63 A MDmesh™ M6 Power MOSFET in TO247-4 package

Features •Reducedswitchinglosses •LowerRDS(on)perareavspreviousgeneration •Lowgateinputresistance •100avalanchetested •Zener-protected •Excellentswitchingperformancethankstotheextradrivingsourcepin Applications •Switchingapplications •LLCconverters •Boo

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

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