丝印：69；Package：SOT23；Voltage regulator diodes

1. General description Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. The diodes are available in the normalized E24 ±1 (BZX84-A), ±2 (BZX84-B) and approximately ±5 (BZX84-C) tolerance range. The series includes 37 breakdown volt

文件：324 Kbytes 页数：14 Pages

NEXPERIA

安世

丝印：69；36V Input VD with Detector and Release Delay Function for Automotive Applications

FEATURES  Operating Voltage Range (Maximum Rating) ·················· R8315NxxxA/B: 1.4V to36.0V (50.0V) R8315NxxxE/F: 3.6V to6.0V (7.0V)  Operating Temperature Range ···································· 40ºC to 125ºC  Supply Current ······················································

文件：1.21082 Mbytes 页数：31 Pages

NISSHINBO

日清纺微电子

丝印：69；150mA Low Supply Current LDO REGULATOR

FEATURES • Supply Current Typ. 1.0μA (Except the current through CE pull down circuit) • Standby Current Typ. 0.1μA • Dropout Voltage

文件：1.26978 Mbytes 页数：36 Pages

NISSHINBO

日清纺微电子

丝印：6900；Package：WSON；BQ2969 Overvoltage Protection for 2-Series, 3-Series, and 4-Series Cell Li-Ion Batteries with Regulated Output Supply

1 Features • 2-series, 3-series, and 4-series cell overvoltage protection (OVP) • Factory programmed OVP threshold (3.6V to 5.2V) with ±12mV accuracy • Fixed delay timer to trigger FET drive output (0.25s to 6.5s options) • Output pin options: – Active high – Open-drain - active pulldown

文件：1.13749 Mbytes 页数：23 Pages

TI

德州仪器

丝印：690T；Package：WSON(DSG)；BQ2969T Overvoltage and Overtemperature Protection for 2-Series, 3-Series, and 4-Series Cell Li-Ion Batteries with LDO Output and Control / PTC Input

1 Features • 2-series, 3-series, and 4-series cell overvoltage protection (OVP) • Factory programmed OVP threshold (3.6V to 5.2V) with ±12mV accuracy • Fixed delay timer to trigger FET drive output (0.25s to 6.5s options) • Control input pin, which can implement cell overtemperature protec

文件：2.32066 Mbytes 页数：31 Pages

TI

德州仪器

丝印：690T；Package：WSON；BQ2969T Overvoltage and Overtemperature Protection for 2-Series, 3-Series, and 4-Series Cell Li-Ion Batteries with LDO Output and Control / PTC Input

1 Features • 2-series, 3-series, and 4-series cell overvoltage protection (OVP) • Factory programmed OVP threshold (3.6V to 5.2V) with ±12mV accuracy • Fixed delay timer to trigger FET drive output (0.25s to 6.5s options) • Control input pin, which can implement cell overtemperature protec

文件：2.33876 Mbytes 页数：33 Pages

TI

德州仪器

丝印：690T；Package：WSON(DSG)；BQ2969T Overvoltage and Overtemperature Protection for 2-Series, 3-Series, and 4-Series Cell Li-Ion Batteries with LDO Output and Control / PTC Input

1 Features • 2-series, 3-series, and 4-series cell overvoltage protection (OVP) • Factory programmed OVP threshold (3.6V to 5.2V) with ±12mV accuracy • Fixed delay timer to trigger FET drive output (0.25s to 6.5s options) • Control input pin, which can implement cell overtemperature protec

文件：2.32066 Mbytes 页数：31 Pages

TI

德州仪器

丝印：6907；Package：WSON；BQ2969 Overvoltage Protection for 2-Series, 3-Series, and 4-Series Cell Li-Ion Batteries with Regulated Output Supply

1 Features • 2-series, 3-series, and 4-series cell overvoltage protection (OVP) • Factory programmed OVP threshold (3.6V to 5.2V) with ±12mV accuracy • Fixed delay timer to trigger FET drive output (0.25s to 6.5s options) • Output pin options: – Active high – Open-drain - active pulldown

文件：1.13749 Mbytes 页数：23 Pages

TI

德州仪器

丝印：6910；Package：SOP-8；Dual N-Channel Enhancement Mode Power MOSFET

GENERAL FEATURES | RosOM=16 mO@VES=10v © Ros =20 MO @VGS=4.5V | ® Super high density cell design for extremely low RoSON | ® Exceptional on-resistance and maximum DC curent cy |

文件：3.39687 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

丝印：695；Package：VSSOP；OPA695 Ultra-Wideband, Current-Feedback Operational Amplifier With Disable

1 Features • Wide bandwidth: – 1900MHz (G = +1V/V) – 600MHz (G = +8V/V) • Large-signal bandwidth (2VPP): 540MHz • Output voltage swing: ±4.05V • Ultra-high slew rate: 5000V/μs • Input voltage noise: 2nV/√Hz • Low distortion (RL = 100Ω, VO = 2VPP): – HD2, HD3 at 10MHz: –65dBc, –92dBc • Hi

文件：3.57159 Mbytes 页数：65 Pages

TI

德州仪器