STW68N60M6

丝印：68N60M6；Package：TO-247；N-channel 600 V, 35 mΩ typ., 63 A MDmesh™ M6 Power MOSFET in a TO-247 package

Features •Reducedswitchinglosses •LowerRDS(on)perareavspreviousgeneration •Lowgateinputresistance •100avalanchetested •Zener-protected Applications •Switchingapplications •LLCconverters •BoostPFCconverters Description ThenewMDmesh™M6technologyincorporat

STW68N60M6

N沟道600 V、35 mOhm典型值、63 A MDmesh M6功率MOSFET，TO-247封装; • Reduced switching losses \n• Lower RDS(on) per area vs previous generation \n• Low gate input resistance \n• 100% avalanche tested \n• Zener-protected;

The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency.\n\n

STW68N60M6

Package：TO-247-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 单个 描述：MOSFET N-CH 600V TO247-3

STW68N60M6-4

丝印：68N60M6；Package：TO247-4；N-channel 600 V, 35 mΩ typ., 63 A MDmesh™ M6 Power MOSFET in TO247-4 package

Features •Reducedswitchinglosses •LowerRDS(on)perareavspreviousgeneration •Lowgateinputresistance •100avalanchetested •Zener-protected •Excellentswitchingperformancethankstotheextradrivingsourcepin Applications •Switchingapplications •LLCconverters •Boo

STWA68N60M6

N-channel600V,35mtyp.,63AMDmeshTMM6PowerMOSFETinaTO-247longleadspackage

Features •Reducedswitchinglosses •LowerRDS(on)perareavspreviousgeneration •Lowgateinputresistance •100avalanchetested •Zener-protected Description ThenewMDmeshTMM6technologyincorporatesthemostrecentadvancementsto thewell-knownandconsolidatedMDmeshfamilyo