丝印：68N；WE-KI SMT Wire Wound Ceramic Inductor

General Information: It is recommended that the temperature of the component does not exceed +125 °C under worst case conditions Ambient Temperature (referring to IR) -40 up to +110 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：494.29 Kbytes 页数：6 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

丝印：68N；WE-KI SMT Wire Wound Ceramic Inductor

General Information: It is recommended that the temperature of the component does not exceed +125 °C under worst case conditions Ambient Temperature (referring to IR) -40 up to +110 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：493.18 Kbytes 页数：6 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

丝印：68N；WE-KI SMT Wire Wound Ceramic Inductor

General Information: It is recommended that the temperature of the component does not exceed +125 °C under worst case conditions Ambient Temperature (referring to IR) -40 up to +110 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：487.74 Kbytes 页数：6 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

丝印：68N60M6；Package：TO-247；N-channel 600 V, 35 mΩ typ., 63 A MDmesh™ M6 Power MOSFET in a TO-247 package

Features • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100 avalanche tested • Zener-protected Applications • Switching applications • LLC converters • Boost PFC converters Description The new MDmesh™ M6 technology incorporat

文件：474.44 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

丝印：68N60M6；Package：TO247-4；N-channel 600 V, 35 mΩ typ., 63 A MDmesh™ M6 Power MOSFET in TO247-4 package

Features • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100 avalanche tested • Zener-protected • Excellent switching performance thanks to the extra driving source pin Applications • Switching applications • LLC converters • Boo

文件：280.75 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

丝印：68N65DM6AG；Package：TO247-4；Automotive N-channel 650 V, 33 m廓 typ., 72 A MDmesh DM6 Power MOSFET in a TO247?? package

文件：263.17 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体