丝印：66；Package：SC-70；General-purpose dual Schottky diode

1. General description General-purpose dual Schottky diode in a small SOT323 Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High switching speed • Low leakage current • High breakdown voltage • Low capacitance • AEC-Q101 qualified 3. Applications • Ultra hig

文件：188.9 Kbytes 页数：8 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：66；Package：SC-70；General-purpose dual Schottky diode

1. General description General-purpose dual Schottky diode in a small SOT323 Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High switching speed • Low leakage current • High breakdown voltage • Low capacitance 3. Applications • Ultra high-speed switching • V

文件：610 Kbytes 页数：8 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：66；Package：SC-70；General-purpose dual Schottky diode

1. General description General-purpose dual Schottky diode in a small SOT323 Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High switching speed • Low leakage current • High breakdown voltage • Low capacitance • Qualified according to AEC-Q101 and recommended fo

文件：186.92 Kbytes 页数：8 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：66；Package：SCD80；Silicon Tuning Diode

Silicon Tuning Diode • Excellent linearity • Low series resistance • Designed for low tuning voltage operation for VCO's in mobile communications equipment • Very low capacitance spread • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101

文件：73.83 Kbytes 页数：7 Pages

Infineon

英飞凌

丝印：66；Package：SOT23；Voltage regulator diodes

1. General description Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. The diodes are available in the normalized E24 ±1 (BZX84-A), ±2 (BZX84-B) and approximately ±5 (BZX84-C) tolerance range. The series includes 37 breakdown volt

文件：324 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：66；Package：U-DFN2020-6；60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

Features Rated to +175°C—Ideal for High Ambient Temperature Environments 100 Unclamped Inductive Switching (UIS) Test in Production: Ensures More Reliable and Robust End Application Low RDS(ON)—Ensures On-State Losses Are Minimized 0.6mm Profile—Ideal for Low-Profile Applications PCB Footprin

文件：435.33 Kbytes 页数：8 Pages

DIODES

美台半导体

丝印：66；Package：U-DFN2020-6；60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

Features Rated to +175°C—Ideal for High Ambient Temperature Environments 100 Unclamped Inductive Switching (UIS) Test in Production: Ensures More Reliable and Robust End Application Low RDS(ON)—Ensures On-State Losses Are Minimized 0.6mm Profile—Ideal for Low-Profile Applications PCB Footprin

文件：435.33 Kbytes 页数：8 Pages

DIODES

美台半导体

丝印：66；Package：U-DFN2020-6；60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

Features Rated to +175°C—Ideal for High Ambient Temperature Environments 100 Unclamped Inductive Switching (UIS) Test in Production: Ensures More Reliable and Robust End Application Low RDS(ON)—Ensures On-State Losses Are Minimized 0.6mm Profile—Ideal for Low-Profile Applications PCB Footprin

文件：435.33 Kbytes 页数：8 Pages

DIODES

美台半导体

丝印：66；Package：U-DFN2020-6；60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

Features Rated to +175°C—Ideal for High Ambient Temperature Environments 100 Unclamped Inductive Switching (UIS) Test in Production: Ensures More Reliable and Robust End Application Low RDS(ON)—Ensures On-State Losses Are Minimized 0.6mm Profile—Ideal for Low-Profile Applications PCB Footprin

文件：435.33 Kbytes 页数：8 Pages

DIODES

美台半导体

丝印：66；Package：SOD-123；Super fast recovery diode

Super Fast Recovery Diode Series Standard Fast Recovery Applications General rectification Features 1) Small power mold type. (PMDU) 2) high switching speed 3) Low Reverse current

文件：134.61 Kbytes 页数：4 Pages

ROHM

罗姆