丝印：6602N；Package：SOT23-6L；NCE N and P-Channel Enhancement Mode Power MOSFET

Description The NCE6602N uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a Battery protection or in other Switching application. General Features ● N-Channel ● VDS = 30V,ID = 3.5A RDS(ON)

文件：440.26 Kbytes 页数：11 Pages

NCEPOWER

新洁能

丝印：6602N；Package：SOT23-6L；N and P-Channel Enhancement Mode Power MOSFET

文件：1.35066 Mbytes 页数：10 Pages

LEIDITECH

雷卯电子

丝印：6602N；Package：SOT23-6L；N and P-Channel Enhancement Mode Power MOSFET

文件：1.34224 Mbytes 页数：10 Pages

LEIDITECH

雷卯电子