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型号：1PS70SB46；Package：SC-70；General-purpose dual Schottky diode

1.Generaldescription General-purposedualSchottkydiodeinasmallSOT323Surface-MountedDevice(SMD)plastic package. 2.Featuresandbenefits •Highswitchingspeed •Lowleakagecurrent •Highbreakdownvoltage •Lowcapacitance •AEC-Q101qualified 3.Applications •Ultrahig

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型号：BAS40-06W；Package：SC-70；General-purpose dual Schottky diode

1.Generaldescription General-purposedualSchottkydiodeinasmallSOT323Surface-MountedDevice(SMD)plastic package. 2.Featuresandbenefits •Highswitchingspeed •Lowleakagecurrent •Highbreakdownvoltage •Lowcapacitance 3.Applications •Ultrahigh-speedswitching •V

66

型号：BAS40-06W-Q；Package：SC-70；General-purpose dual Schottky diode

1.Generaldescription General-purposedualSchottkydiodeinasmallSOT323Surface-MountedDevice(SMD)plastic package. 2.Featuresandbenefits •Highswitchingspeed •Lowleakagecurrent •Highbreakdownvoltage •Lowcapacitance •QualifiedaccordingtoAEC-Q101andrecommendedfo

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型号：BBY56-02W；Package：SCD80；Silicon Tuning Diode

SiliconTuningDiode •Excellentlinearity •Lowseriesresistance •Designedforlowtuningvoltageoperation forVCO'sinmobilecommunicationsequipment •Verylowcapacitancespread •Pb-free(RoHScompliant)package1) •QualifiedaccordingAECQ101

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型号：BZX84-B10；Package：SOT23；Voltage regulator diodes

1.Generaldescription Low-powervoltageregulatordiodesinasmallSOT23(TO-236AB)Surface-MountedDevice(SMD) plasticpackage. ThediodesareavailableinthenormalizedE24±1(BZX84-A),±2(BZX84-B)and approximately±5(BZX84-C)tolerancerange.Theseriesincludes37breakdownvolt

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型号：DMTH6016LFDFWQ-13；Package：U-DFN2020-6；60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

Features Ratedto+175°C—IdealforHighAmbientTemperatureEnvironments 100UnclampedInductiveSwitching(UIS)TestinProduction:EnsuresMoreReliableandRobustEndApplication LowRDS(ON)—EnsuresOn-StateLossesAreMinimized 0.6mmProfile—IdealforLow-ProfileApplications PCBFootprin

66

型号：DMTH6016LFDFWQ-13R；Package：U-DFN2020-6；60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

Features Ratedto+175°C—IdealforHighAmbientTemperatureEnvironments 100UnclampedInductiveSwitching(UIS)TestinProduction:EnsuresMoreReliableandRobustEndApplication LowRDS(ON)—EnsuresOn-StateLossesAreMinimized 0.6mmProfile—IdealforLow-ProfileApplications PCBFootprin

66

型号：DMTH6016LFDFWQ-7；Package：U-DFN2020-6；60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

Features Ratedto+175°C—IdealforHighAmbientTemperatureEnvironments 100UnclampedInductiveSwitching(UIS)TestinProduction:EnsuresMoreReliableandRobustEndApplication LowRDS(ON)—EnsuresOn-StateLossesAreMinimized 0.6mmProfile—IdealforLow-ProfileApplications PCBFootprin

66

型号：DMTH6016LFDFWQ-7R；Package：U-DFN2020-6；60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

Features Ratedto+175°C—IdealforHighAmbientTemperatureEnvironments 100UnclampedInductiveSwitching(UIS)TestinProduction:EnsuresMoreReliableandRobustEndApplication LowRDS(ON)—EnsuresOn-StateLossesAreMinimized 0.6mmProfile—IdealforLow-ProfileApplications PCBFootprin

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型号：RF081M2S；Package：SOD-123；Super fast recovery diode

SuperFastRecoveryDiode Series StandardFastRecovery Applications Generalrectification Features 1)Smallpowermoldtype.(PMDU) 2)highswitchingspeed 3)LowReversecurrent