丝印：66；Package：U-DFN2020-6；60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

Features Rated to +175°C—Ideal for High Ambient Temperature Environments 100 Unclamped Inductive Switching (UIS) Test in Production: Ensures More Reliable and Robust End Application Low RDS(ON)—Ensures On-State Losses Are Minimized 0.6mm Profile—Ideal for Low-Profile Applications PCB Footprin

文件：435.33 Kbytes 页数：8 Pages

DIODES

美台半导体

60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

Features Rated to +175°C—Ideal for High Ambient Temperature Environments 100 Unclamped Inductive Switching (UIS) Test in Production: Ensures More Reliable and Robust End Application Low RDS(ON)—Ensures On-State Losses Are Minimized 0.6mm Profile—Ideal for Low-Profile Applications PCB Footprin

文件：435.33 Kbytes 页数：8 Pages

DIODES

美台半导体