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65F6190

Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 650V CoolMOS™ CFD2 series combines the experience of the leading SJ MOSFET supplier with high class innovation. Applic

文件:3.83053 Mbytes 页数:20 Pages

Infineon

英飞凌

IPA65R190CFD

丝印:65F6190;Package:PG-TO220FullPAK;Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 650V CoolMOS™ CFD2 series combines the experience of the leading SJ MOSFET supplier with high class innovation. Applic

文件:3.83053 Mbytes 页数:20 Pages

Infineon

英飞凌

IPB65R190CFD

丝印:65F6190;Package:PG-TO263;Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 650V CoolMOS™ CFD2 series combines the experience of the leading SJ MOSFET supplier with high class innovation. Applic

文件:3.83053 Mbytes 页数:20 Pages

Infineon

英飞凌

IPI65R190CFD

丝印:65F6190;Package:PG-TO262;Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 650V CoolMOS™ CFD2 series combines the experience of the leading SJ MOSFET supplier with high class innovation. Applic

文件:3.83053 Mbytes 页数:20 Pages

Infineon

英飞凌

IPP65R190CFD

丝印:65F6190;Package:PG-TO220;Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 650V CoolMOS™ CFD2 series combines the experience of the leading SJ MOSFET supplier with high class innovation. Applic

文件:3.83053 Mbytes 页数:20 Pages

Infineon

英飞凌

IPW65R190CFD

丝印:65F6190;Package:PG-TO247;Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 650V CoolMOS™ CFD2 series combines the experience of the leading SJ MOSFET supplier with high class innovation. Applic

文件:3.83053 Mbytes 页数:20 Pages

Infineon

英飞凌

供应商型号品牌批号封装库存备注价格
INFINEON
24+
TO220
36500
原装现货/放心购买
询价
INFINEON/英飞凌
23+
TO-3P
50000
全新原装正品现货,支持订货
询价
Infineon/英飞凌
22+
TO-220F
6000
十年配单,只做原装
询价
INFINEON/英飞凌
23+
TO-TO-220F
17300
原厂授权代理,海外优势订货渠道。可提供大量库存,详
询价
INFINEON/英飞凌
22+
TO220
12245
现货,原厂原装假一罚十!
询价
INFINEON/英飞凌
22+
TO247
30000
十七年VIP会员,诚信经营,一手货源,原装正品可零售!
询价
Infineon/英飞凌
22+
TO-220F
25000
只做原装进口现货,专注配单
询价
INFINEON/英飞凌
24+
NA/
299
优势代理渠道,原装正品,可全系列订货开增值税票
询价
INFINEON/英飞凌
23+
TO-3P
8000
只做原装现货
询价
INFINEON/英飞凌
23+
TO-3P
7000
询价
更多65F6190供应商 更新时间2025-12-13 10:03:00