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埃斐

NPN SILICON POWER DARLINGTONS

PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD645, BD647, BD649 and BD651 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3 V , 3 A

文件：115.8 Kbytes 页数：6 Pages

POINN

Rectifier diodes Schottky barrier

GENERAL DESCRIPTION Dual, common cathode schottky rectifier diodes in a plastic envelope. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYR645CT series is supplied in the conventional leaded SOT82 package. FEATURES • Low forward volt dr

文件：33.78 Kbytes 页数：5 Pages

PHI

PHI

Rectifier diodes Schottky barrier

GENERAL DESCRIPTION Dual schottky rectifier diodes intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYR645CTD series is supplied in the SOT428 surface mounting package. FEATURES • Low forward volt drop • Fast switching • Reverse surge ca

文件：45.89 Kbytes 页数：5 Pages

PHI

PHI