FMMT619

Marking：619；Package：SOT-23；SOT23 NPN SILICON POWER

Features •BVCEO>15V •IC=3AhighContinuousCollectorCurrent •ICM=12APeakPulseCurrent •RCE(sat)=50mΩforalowequivalentOn-Resistance •625mWPowerdissipation •hFEspecifiedupto12Aforhighcurrentgainholdup •ComplementaryPNPType:FMMT717 •TotallyLead-Free&am

FMMT619

Marking：619；Package：SOT-23；NPN SILICON POWER (SWITCHING) TRANSISTORS

FEATURES *625mWPOWERDISSIPATION *ICCONT3A *12APeakPulseCurrent *ExcellentHFECharacteristicsUpTo12A(pulsed) *ExtremelyLowSaturationVoltageE.g.8mVTyp. *ExtremelyLowEquivalentOnResistance;RCE(sat)

FMMT619

Marking：619；Package：SOT-23；NPN Transistors

■Features ●CollectorCurrentCapabilityIC=2A ●CollectorEmitterVoltageVCEO=50V ●ComplementarytoFMMT720

FSB619

Marking：619；Package：SSOT-3L；NPN Low-Saturation Transistor

ICS-40619

Marking：619；High Dynamic Range Microphone with Differential Output and Low Power