6116资料datasheet下载贸易商瑞萨第2页-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
6116LA	文件：185.12 Kbytes Page：13 Pages	CMOS Static RAM 16K (2K x 8-Bit) ◆ High-speed access and chip select times – Commercial: 15/20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/90/120/150ns (max.) ◆ Low-power consumption ◆ Battery backup operation – 2V data retention voltage (LA version only) ◆ Produced with advanced CMOS high-perfor 文件：185.12 Kbytes 页数：13 Pages	RENESAS 瑞萨	RENESAS
6116LA120DB	文件：185.12 Kbytes Page：13 Pages	CMOS Static RAM 16K (2K x 8-Bit) ◆ High-speed access and chip select times – Commercial: 15/20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/90/120/150ns (max.) ◆ Low-power consumption ◆ Battery backup operation – 2V data retention voltage (LA version only) ◆ Produced with advanced CMOS high-perfor 文件：185.12 Kbytes 页数：13 Pages	RENESAS 瑞萨	RENESAS
6116LA120TDB	文件：185.12 Kbytes Page：13 Pages	CMOS Static RAM 16K (2K x 8-Bit) ◆ High-speed access and chip select times – Commercial: 15/20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/90/120/150ns (max.) ◆ Low-power consumption ◆ Battery backup operation – 2V data retention voltage (LA version only) ◆ Produced with advanced CMOS high-perfor 文件：185.12 Kbytes 页数：13 Pages	RENESAS 瑞萨	RENESAS
6116LA150DB	文件：185.12 Kbytes Page：13 Pages	CMOS Static RAM 16K (2K x 8-Bit) ◆ High-speed access and chip select times – Commercial: 15/20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/90/120/150ns (max.) ◆ Low-power consumption ◆ Battery backup operation – 2V data retention voltage (LA version only) ◆ Produced with advanced CMOS high-perfor 文件：185.12 Kbytes 页数：13 Pages	RENESAS 瑞萨	RENESAS
6116LA150TDB	文件：185.12 Kbytes Page：13 Pages	CMOS Static RAM 16K (2K x 8-Bit) ◆ High-speed access and chip select times – Commercial: 15/20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/90/120/150ns (max.) ◆ Low-power consumption ◆ Battery backup operation – 2V data retention voltage (LA version only) ◆ Produced with advanced CMOS high-perfor 文件：185.12 Kbytes 页数：13 Pages	RENESAS 瑞萨	RENESAS
6116LA20SOG	文件：185.12 Kbytes Page：13 Pages	CMOS Static RAM 16K (2K x 8-Bit) ◆ High-speed access and chip select times – Commercial: 15/20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/90/120/150ns (max.) ◆ Low-power consumption ◆ Battery backup operation – 2V data retention voltage (LA version only) ◆ Produced with advanced CMOS high-perfor 文件：185.12 Kbytes 页数：13 Pages	RENESAS 瑞萨	RENESAS
6116LA20SOG8	文件：185.12 Kbytes Page：13 Pages	CMOS Static RAM 16K (2K x 8-Bit) ◆ High-speed access and chip select times – Commercial: 15/20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/90/120/150ns (max.) ◆ Low-power consumption ◆ Battery backup operation – 2V data retention voltage (LA version only) ◆ Produced with advanced CMOS high-perfor 文件：185.12 Kbytes 页数：13 Pages	RENESAS 瑞萨	RENESAS
6116LA20SOGI	文件：185.12 Kbytes Page：13 Pages	CMOS Static RAM 16K (2K x 8-Bit) ◆ High-speed access and chip select times – Commercial: 15/20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/90/120/150ns (max.) ◆ Low-power consumption ◆ Battery backup operation – 2V data retention voltage (LA version only) ◆ Produced with advanced CMOS high-perfor 文件：185.12 Kbytes 页数：13 Pages	RENESAS 瑞萨	RENESAS
6116LA20SOGI8	文件：185.12 Kbytes Page：13 Pages	CMOS Static RAM 16K (2K x 8-Bit) ◆ High-speed access and chip select times – Commercial: 15/20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/90/120/150ns (max.) ◆ Low-power consumption ◆ Battery backup operation – 2V data retention voltage (LA version only) ◆ Produced with advanced CMOS high-perfor 文件：185.12 Kbytes 页数：13 Pages	RENESAS 瑞萨	RENESAS
6116LA20TDB	文件：185.12 Kbytes Page：13 Pages	CMOS Static RAM 16K (2K x 8-Bit) ◆ High-speed access and chip select times – Commercial: 15/20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/90/120/150ns (max.) ◆ Low-power consumption ◆ Battery backup operation – 2V data retention voltage (LA version only) ◆ Produced with advanced CMOS high-perfor 文件：185.12 Kbytes 页数：13 Pages	RENESAS 瑞萨	RENESAS

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技术参数

Density (Kb)：
16
Bus Width (bits)：
8
Core Voltage (V)：
5
Pkg. Type：
CDIP
Organization：
2K x 8
I/O Voltage (V)：
5
Access Time (ns)：
120
Temp. Range：
-40 to 85°C
Architecture：
Asynchronous

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市一线半导体有限公司	6116		24+	DIP-24	19		询价
深圳市佳鑫美电子科技有限公司	6116	IDT	25+	SOP24W	3629	原装优势!房间现货!欢迎来电!	询价
深圳市威尔健半导体有限公司	6116	HY	23+		50000	全新原装正品现货,支持订货	询价
深圳市安富世纪电子有限公司	6116	HY	23+	原厂原装	772	全新原装正品现货,支持订货	询价
深圳市创新迹电子有限公司	6116	HY	22+	原厂原装	20000	公司只有原装品质保证	询价
齐创科技(上海,北京,青岛)有限公司	6116ALSP-15	HIT	23+	DIP	5000	原装正品,假一罚十	询价
芯有半导体（深圳）有限公司	6116ALSP-12	HITACHI	05+	原厂原装	431	只做全新原装真实现货供应	询价
深圳市利加科技有限公司	6116526-1	TECONN	16+	NA	8800	原装现货,货真价优	询价
深圳市勤思达科技有限公司	61169A	INF	10+	SOP-18	7800	全新原装正品,现货销售	询价
深圳市联世界科技有限公司	6116SA-45TP	IDT	24+/25+		1217	原装正品现货库存价优	询价

更多6116供应商更新时间2026-4-17 16:30:00

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