Airfast RF Power GaN Transistor

This 27 dBm RF power GaN transistor is designed for cellular base station applications covering the frequency range of 3300 to 3800 MHz. Features • High terminal impedances for optimal broadband performance • Designed for low complexity linearization systems • Universal broadband driver •

文件：207.48 Kbytes 页数：13 Pages

恩XP

Airfast RF Power GaN Transistor

This 27 dBm RF power GaN transistor is designed for cellular base station applications covering the frequency range of 2496 to 2690 MHz. Features • High terminal impedances for optimal broadband performance • Designed for low complexity linearization systems • Universal broadband driver •

文件：209.82 Kbytes 页数：13 Pages

恩XP

Airfast RF Power GaN Transistor

Features • High terminal impedances for optimal broadband performance • Designed for low complexity linearization systems • Universal broadband driver • Optimized for massive MIMO active antenna systems for 5G base stations

文件：209.78 Kbytes 页数：13 Pages

恩XP

ATC 600S Series Ultra-Low ESR, High Q, NPO RF Microwave Capacitors

文件：510.64 Kbytes 页数：7 Pages

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KYOCERA AVX

Package：0603（1608 公制）；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：电容器 陶瓷电容器 描述：CAP CER 0.4PF 250V C0G/NP0 0603

American Technical Ceramics

Package：0603（1608 公制）；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：电容器 陶瓷电容器 描述：CAP CER 0.4PF 250V C0G/NP0 0603

American Technical Ceramics