5A, 650V N-CHANNEL POWER MOSFET

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5A , 650V   N-CHANNEL   POWER MOSFET

The UTC 5N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications at power supplies, PWM motor co • RDS(ON) = 2.4 Ω @VGS = 10 V \n• Low Reverse Transfer Capacitance ( CRSS = Typical 6.5 pF ) \n• Avalanche Energy Specified \n• Improved dv/dt Capability, High Ruggedness;

UTC

友顺

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 5.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.4Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

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