isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 5.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.4Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

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ISC

无锡固电

5A, 650V N-CHANNEL POWER MOSFET

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UTC

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N-CHANNEL POWER MOSFET

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SUNMATE

森美特

5A, 650V N-CHANNEL POWER MOSFET

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UTC

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5A, 650V N-CHANNEL POWER MOSFET

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UTC

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N-Channel MOSFET uses advanced trench technology

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DOINGTER

杜因特

5A, 650V N-CHANNEL POWER MOSFET

The UTC 5N65K-MT is a high voltage power MOSFET designedto have better characteristics, such as fast switching time, low gatecharge, low on-state resistance and high rugged avalanchecharacteristics. This power MOSFET is usually used in high speedswitching applications at power supplies, PWM motor co • RDS(ON) < 2.4Ω @VGS = 10 V\n• Fast Switching Capability\n• Improved dv/dt Capability, High Ruggedness;

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