丝印：5N06；Package：SPR-8PP；N-Channel Enhancement Mode Power MOSFET

文件：339.17 Kbytes 页数：4 Pages

SECOS

喜可士

丝印：5N06L011；Package：PG-TDSON-8-53；OptiMOS™-5 Power-Transistor

Features • OptiMOS™ power MOSFET for automotive applications • N-channel – Enhancement mode – Logic Level • Extended qualification beyond AEC-Q101 • Enhanced electrical testing • Robust design • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) •

文件：826.11 Kbytes 页数：12 Pages

Infineon

英飞凌

丝印：5N06L015；Package：PG-TDSON-8-43；OptiMOS™-5 Power-Transistor

Features • OptiMOS™ power MOSFET for automotive applications • N-channel – Enhancement mode – Logic Level • Extended qualification beyond AEC-Q101 • Enhanced electrical testing • Robust design • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) •

文件：887.97 Kbytes 页数：12 Pages

Infineon

英飞凌

丝印：5N06L022；Package：PG-TDSON-8-34；OptiMOS™-5 Power-Transistor

Features • OptiMOS™ power MOSFET for automotive applications • N-channel – Enhancement mode – Logic Level • Extended qualification beyond AEC-Q101 • Enhanced electrical testing • Robust design • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) •

文件：889.25 Kbytes 页数：12 Pages

Infineon

英飞凌

丝印：5N06N011；Package：PG-TDSON-8-53；OptiMOS™-5 Power-Transistor

Features • OptiMOS™ power MOSFET for automotive applications • N-channel – Enhancement mode – Normal Level • Extended qualification beyond AEC-Q101 • Enhanced electrical testing • Robust design • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) •

文件：826.39 Kbytes 页数：12 Pages

Infineon

英飞凌

丝印：5N06N015；Package：PG-TDSON-8-43；OptiMOS™-5 Power-Transistor

Features • OptiMOS™ power MOSFET for automotive applications • N-channel – Enhancement mode – Logic Level • Extended qualification beyond AEC-Q101 • Enhanced electrical testing • Robust design • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) •

文件：1.32084 Mbytes 页数：12 Pages

Infineon

英飞凌

丝印：5N06N022；Package：PG-TDSON-8-34；OptiMOS™-5 Power-Transistor

Features • OptiMOS™ power MOSFET for automotive applications • N-channel – Enhancement mode – Normal Level • Extended qualification beyond AEC-Q101 • Enhanced electrical testing • Robust design • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) •

文件：923.41 Kbytes 页数：12 Pages

Infineon

英飞凌

丝印：5N06N032；Package：PG-TDSON-8-34；OptiMOS™-5 Power-Transistor

Features • OptiMOS™ power MOSFET for automotive applications • N-channel – Enhancement mode – Normal Level • Extended qualification beyond AEC-Q101 • Enhanced electrical testing • Robust design • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) •

文件：898.43 Kbytes 页数：12 Pages

Infineon

英飞凌

丝印：5N06N008；Package：PG-HSOF-8-1；OptiMOS™ 5 Power-Transistor

Features • OptiMOS™ power MOSFET for automotive applications • N-channel – enhancement mode – normal level • Extended qualification beyond AEC-Q101 • Enhanced electrical testing • Robust design • MSL1 up to 260°C peak reflow • 175°C operating temperature • RoHS compliant • 100 avalanche t

文件：1.28309 Mbytes 页数：12 Pages

Infineon

英飞凌

丝印：5N06N008；Package：PG-HSOG-8-1；OptiMOS™ 5 Power-Transistor

Features • OptiMOS™ power MOSFET for automotive applications • N-channel – enhancement mode – normal level • Extended qualification beyond AEC-Q101 • Enhanced electrical testing • Robust design • MSL1 up to 260°C peak reflow • 175°C operating temperature • RoHS compliant • 100 avalanche t

文件：1.4419 Mbytes 页数：12 Pages

Infineon

英飞凌