丝印：5C478N；Package：DFN8；Power MOSFET 40 V, 17.0 m, 27 A, Dual N?묬hannel

Features • Small Footprint (5 x 6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVMFD5C478NWF − Wettable Flanks Product • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：220.92 Kbytes 页数：7 Pages

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安森美半导体

丝印：5C406L；Package：DFN5；MOSFET ??Power, Single N-Channel 40 V, 0.7 m, 362 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS5C406NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and

文件：202.3 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：5C406N；Package：DFN5；MOSFET - Power, Single N-Channel 40 V, 0.8 m, 353 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS5C406NWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and

文件：184.89 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：5C456N；Package：DFN5；MOSFET ??Power, Single N-Channel 40 V, 4.5 m, 80 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS5C456NWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and

文件：190.63 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：5C460N；Package：DFN5；MOSFET ??Power, Single N-Channel 40 V, 5.3 m, 71 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS5C460NWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and

文件：193.25 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：5C466L；Package：DFN5；MOSFET ??Power, Single N-Channel 40 V, 7.3 m, 52 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS5C466NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and

文件：186.15 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：5C466N；Package：DFN5；MOSFET ??Power, Single N-Channel 40 V, 8.1 m, 49 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS5C466NWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and

文件：198.54 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：5C468N；Package：DFN5；MOSFET ??Power, Single N-Channel 40 V, 12 m, 35 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS5C468NWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and

文件：187.5 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：5C446L；Package：DFN8；MOSFET ??Power, Dual, N-Channel 40 V, 2.65 m, 145 A

文件：231.85 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：5C462L；Package：DFN8；Power MOSFET 40 V, 4.7 m, 84 A, Dual N?묬hannel

文件：219.36 Kbytes 页数：7 Pages

ONSEMI

安森美半导体