UHF Wide-band Low-noise Amplifier Applications

UHF Wide-band Low-noise Amplifier Applications Features • High cutoff frequency : fT= 5.5GHz typ. • High gain : |S21e|2=10dB typ (f=1GHz).

文件：29.52 Kbytes 页数：5 Pages

SANYO

三洋

NPN Epitaxial Planar Silicon Transistor UHF Wide-band Low-noise Amplifier Applications

UHF Wide-band Low-noise Amplifier Applications Features • High cut-off frequency : fT=5.5GHz typ • High gain : ⏐S21e⏐2=10dB typ (f=1GHz)

文件：54.68 Kbytes 页数：6 Pages

SANYO

三洋

RF Transistor 10V, 70mA, fT=5.5GHz, NPN Single MCP

RF Transistor 10V, 70mA, fT=5.5GHz, NPN Single MCP Features • High cut-off frequency : fT=5.5GHz typ • High gain : ⏐S21e⏐2=10dB typ (f=1GHz)

文件：308.02 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

RF Transistor 10V, 70mA, fT=5.5GHz, NPN Single MCP

RF Transistor 10V, 70mA, fT=5.5GHz, NPN Single MCP Features • High cut-off frequency : fT=5.5GHz typ • High gain : ⏐S21e⏐2=10dB typ (f=1GHz)

文件：308.02 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

RF Transistor

RF Transistor 10V, 70mA, fT=5.5GHz, NPN Single MCP Features • High cut-off frequency : fT=5.5GHz typ • High gain : ⏐S21e⏐2=10dB typ (f=1GHz)

文件：308.02 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

UHF Wide-band Low-noise Amplifier Applications

文件：418.89 Kbytes 页数：8 Pages

SANYO

三洋

UHF Wide-band Low-noise Amplifier Applications

文件：418.89 Kbytes 页数：8 Pages

SANYO

三洋

Pico-GET Series

ONSEMI

安森美半导体

射频晶体管，NPN 单，10 V，70 mA，fT = 5.5 GHz

55GN01MA is RF Transistor, 10 V, 70 mA, fT = 5.5 GHz, NPN Single MCP for UHF Wide-band Low-noise Amplifier Applications. • High cut-off frequency : fT=5.5GHz typ\n• High gain : Forward Transfer Gain=10dB typ (f=1GHz);

ONSEMI

安森美半导体

Package：SC-70，SOT-323；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：RF TRANS NPN 10V 5.5GHZ 3MCP

ONSEMI

安森美半导体