51A30-01-1-06S数据表ic资料原装现货华瑞-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
51A30-01-1-05N	文件：300 bytes Page：1 Pages	旋转开关	Grayhill	Grayhill
51A30-01-1-06S	文件：300 bytes Page：1 Pages	旋转开关	Grayhill	Grayhill
51A30-01-1-12S-F	文件：300 bytes Page：1 Pages	旋转开关	Grayhill	Grayhill
CEB51A3	文件：103.92 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 30V, 48A, RDS(ON) =16.5mΩ @VGS = 10V. RDS(ON) =28mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package. 文件：103.92 Kbytes 页数：4 Pages	CET 华瑞	CET
CED51A3	文件：143.62 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 30V, 35A, RDS(ON) = 14mΩ(typ) @VGS = 10V. RDS(ON) = 21mΩ(typ) @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package. 文件：143.62 Kbytes 页数：4 Pages	CET 华瑞	CET
CEP51A3	文件：103.92 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 30V, 48A, RDS(ON) =16.5mΩ @VGS = 10V. RDS(ON) =28mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package. 文件：103.92 Kbytes 页数：4 Pages	CET 华瑞	CET

更多51A3供应商更新时间2021-9-14 10:50:00