GENERAL PURPOSE TYPE PHOTOCOUPLER

Features • Response Time (tr : TYP,3 μ s at VCE=10V, IC=2mA, RL=100Ω) • UL approved (No. E113898) • TUV approved (No.R9653630) • CSA approved (No. CA91533-1) • FIMKO approved (No. 193422) • NEMKO approved (No. P96103013) • DEMKO approved (No. 303985) • SEMKO approved (No. 9646047/01-30)

文件：757.52 Kbytes 页数：5 Pages

LITEON

光宝科技

6-Pin DIP Optoisolators Transistor Output

The4N25/A, 4N26, 4N27 and 4N28 devices consist of a gallium arsenide infraredemitting diode optically coupled to amonolithic silicon phototransistor detector. • Most Economical Optoisolator Choice for Medium Speed, Switching Applications • Meets or Exceeds All JEDEC Registered Specific

文件：280.92 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

Phototransistor Optocoupler General Purpose Type

Description The 4N25 is an optocoupler for general purpose applications. It contains a light emitting diode optically coupled to a photo-transistor. It is packaged in a 6-pin DIP package and available in wide-lead spacing option and lead bend SMD option. Response time, tr, is typically 3 µs a

文件：228.64 Kbytes 页数：7 Pages

AVAGO

安华高

GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS

DESCRIPTION The general purpose optocouplers consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual in-line package. FEATURES • Also available in white package by specifying -M suffix, eg. 4N25-M • UL recognized (File # E90700) • VDE recognized

文件：614.32 Kbytes 页数：15 Pages

ROHM

罗姆

Optically-Coupled Isolator Optoelectronic Products

General Description The 4N25, 4N26, 4N27, and 4N28 series of optoisolatiors has a silicon npn Planar phototransistor coupled to a GaAs diode. Each is mounted in a 8-pin plastic dual in-line package. Glassolated™ High Current Transfer Ratio - Typically 50 500 V to 2500 V minimum isolation input

文件：101.56 Kbytes 页数：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

6-Pin DIP Optoisolators Transistor Output

6-Pin DIP Optoisolators Transistor Output The 4N25, 4N26, 4N27 and 4N28 devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. • Most Economical Optoisolator Choice for Medium Speed, Switching Applications • Meets or Exc

文件：1.11047 Mbytes 页数：6 Pages

AMMSEMI

DC Input 6-Pin Phototransistor Optocoupler

Description The 4N25, 4N26, 4N27, 4N28, 4N35, 4N36, 4N37, 4N38, H11A1, H11A2, H11A3, H11A4, H11A5 series consists of a photo transistor optically coupled to a gallium arsenide Infrared-emitting diode in a 6-lead DIP package different lead forming options. Features • High isolation 5000 VRMS •

文件：1.46593 Mbytes 页数：14 Pages

CTMICRO

丝印：UMW；Package：DIP-6；The 4N25, 4N26, 4N27, 4N28, 4N35, 4N36, 4N37, 4N38 series combine an AlGaAs infrared emitting diode as the emitter which is optically coupled to a silicon planar phototransistor detector in a plastic DIP6 package with different lead forming options.

Features * High isolation 5000 VRMS * DC input with transistor output * Operating temperature range - 55 °C to 110 °C * RoHS & REACH Compliance * MSL class 1 * UL-approved: UL1577, File No.E492440

文件：905.19 Kbytes 页数：8 Pages

UMW

友台半导体

6 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER

文件：1.2236 Mbytes 页数：13 Pages

EVERLIGHT

台湾亿光

GAAS INFRARED EMITTING DIODE

文件：610.23 Kbytes 页数：5 Pages

QT