丝印：UMW；Package：DIP-6；The 4N25, 4N26, 4N27, 4N28, 4N35, 4N36, 4N37, 4N38 series combine an AlGaAs infrared emitting diode as the emitter which is optically coupled to a silicon planar phototransistor detector in a plastic DIP6 package with different lead forming options.

Features * High isolation 5000 VRMS * DC input with transistor output * Operating temperature range - 55 °C to 110 °C * RoHS & REACH Compliance * MSL class 1 * UL-approved: UL1577, File No.E492440

文件：905.19 Kbytes 页数：8 Pages

UMW

友台半导体

丝印：UMW；Package：SOP-6；The 4N25, 4N26, 4N27, 4N28, 4N35, 4N36, 4N37, 4N38 series combine an AlGaAs infrared emitting diode as the emitter which is optically coupled to a silicon planar phototransistor detector in a plastic DIP6 package with different lead forming options.

Features * High isolation 5000 VRMS * DC input with transistor output * Operating temperature range - 55 °C to 110 °C * RoHS & REACH Compliance * MSL class 1 * UL-approved: UL1577, File No.E492440

文件：905.19 Kbytes 页数：8 Pages

UMW

友台半导体

丝印：UMW；Package：DIP-6；The 4N25, 4N26, 4N27, 4N28, 4N35, 4N36, 4N37, 4N38 series combine an AlGaAs infrared emitting diode as the emitter which is optically coupled to a silicon planar phototransistor detector in a plastic DIP6 package with different lead forming options.

Features * High isolation 5000 VRMS * DC input with transistor output * Operating temperature range - 55 °C to 110 °C * RoHS & REACH Compliance * MSL class 1 * UL-approved: UL1577, File No.E492440

文件：905.19 Kbytes 页数：8 Pages

UMW

友台半导体

丝印：UMW；Package：SOP-6；The 4N25, 4N26, 4N27, 4N28, 4N35, 4N36, 4N37, 4N38 series combine an AlGaAs infrared emitting diode as the emitter which is optically coupled to a silicon planar phototransistor detector in a plastic DIP6 package with different lead forming options.

Features * High isolation 5000 VRMS * DC input with transistor output * Operating temperature range - 55 °C to 110 °C * RoHS & REACH Compliance * MSL class 1 * UL-approved: UL1577, File No.E492440

文件：905.19 Kbytes 页数：8 Pages

UMW

友台半导体

丝印：UMW；Package：DIP-6；The 4N25, 4N26, 4N27, 4N28, 4N35, 4N36, 4N37, 4N38 series combine an AlGaAs infrared emitting diode as the emitter which is optically coupled to a silicon planar phototransistor detector in a plastic DIP6 package with different lead forming options.

Features * High isolation 5000 VRMS * DC input with transistor output * Operating temperature range - 55 °C to 110 °C * RoHS & REACH Compliance * MSL class 1 * UL-approved: UL1577, File No.E492440

文件：905.19 Kbytes 页数：8 Pages

UMW

友台半导体

丝印：UMW；Package：SOP-6；The 4N25, 4N26, 4N27, 4N28, 4N35, 4N36, 4N37, 4N38 series combine an AlGaAs infrared emitting diode as the emitter which is optically coupled to a silicon planar phototransistor detector in a plastic DIP6 package with different lead forming options.

Features * High isolation 5000 VRMS * DC input with transistor output * Operating temperature range - 55 °C to 110 °C * RoHS & REACH Compliance * MSL class 1 * UL-approved: UL1577, File No.E492440

文件：905.19 Kbytes 页数：8 Pages

UMW

友台半导体

丝印：UMW；Package：DIP-6；The 4N25, 4N26, 4N27, 4N28, 4N35, 4N36, 4N37, 4N38 series combine an AlGaAs infrared emitting diode as the emitter which is optically coupled to a silicon planar phototransistor detector in a plastic DIP6 package with different lead forming options.

Features * High isolation 5000 VRMS * DC input with transistor output * Operating temperature range - 55 °C to 110 °C * RoHS & REACH Compliance * MSL class 1 * UL-approved: UL1577, File No.E492440

文件：905.19 Kbytes 页数：8 Pages

UMW

友台半导体

丝印：UMW；Package：SOP-6；The 4N25, 4N26, 4N27, 4N28, 4N35, 4N36, 4N37, 4N38 series combine an AlGaAs infrared emitting diode as the emitter which is optically coupled to a silicon planar phototransistor detector in a plastic DIP6 package with different lead forming options.

Features * High isolation 5000 VRMS * DC input with transistor output * Operating temperature range - 55 °C to 110 °C * RoHS & REACH Compliance * MSL class 1 * UL-approved: UL1577, File No.E492440

文件：905.19 Kbytes 页数：8 Pages

UMW

友台半导体

丝印：UMW；Package：DIP-6；The 4N25, 4N26, 4N27, 4N28, 4N35, 4N36, 4N37, 4N38 series combine an AlGaAs infrared emitting diode as the emitter which is optically coupled to a silicon planar phototransistor detector in a plastic DIP6 package with different lead forming options.

Features * High isolation 5000 VRMS * DC input with transistor output * Operating temperature range - 55 °C to 110 °C * RoHS & REACH Compliance * MSL class 1 * UL-approved: UL1577, File No.E492440

文件：905.19 Kbytes 页数：8 Pages

UMW

友台半导体

丝印：UMW；Package：SOP-6；The 4N25, 4N26, 4N27, 4N28, 4N35, 4N36, 4N37, 4N38 series combine an AlGaAs infrared emitting diode as the emitter which is optically coupled to a silicon planar phototransistor detector in a plastic DIP6 package with different lead forming options.

Features * High isolation 5000 VRMS * DC input with transistor output * Operating temperature range - 55 °C to 110 °C * RoHS & REACH Compliance * MSL class 1 * UL-approved: UL1577, File No.E492440

文件：905.19 Kbytes 页数：8 Pages

UMW

友台半导体