UN0412N2R0-PD56芯片代码丝印对应型号-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
UN0412N2R0-PD56	文件：4.02011 Mbytes Page：9 Pages	丝印：UN0412N；Package：DFN5x6-8L；N-Channel Enhancement Mode MOSFET Feature Proprietary Trench Gate Device Design and Processes Low RDS(ON) 100% Avalanche Tested Reliable and Rugged RoHS complian Applications DC/DC Converter Battery Management System Industrial and Motor Drive applications Synchronous rectifier applications Half-bridge and full-br 文件：4.02011 Mbytes 页数：9 Pages	UNSEMI 优恩半导体	UNSEMI
UN0412N2R0-PD56	文件：4.02011 Mbytes Page：9 Pages	丝印：UN0412N；Package：DFN5x6-8L；N-Channel Enhancement Mode MOSFET Feature Proprietary Trench Gate Device Design and Processes Low RDS(ON) 100% Avalanche Tested Reliable and Rugged RoHS complian Applications DC/DC Converter Battery Management System Industrial and Motor Drive applications Synchronous rectifier applications Half-bridge and full-br 文件：4.02011 Mbytes 页数：9 Pages	UNSEMI 优恩半导体	UNSEMI

更多UN0412N供应商更新时间2025-9-18 14:01:00