丝印：4D9N4；Package：WDFN8；MOSFET - Power, Single N-Channel, STD Gate, 8FL 40 V, 4.9 m, 65 A

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Small Footprint (3.3 x 3.3 mm) for Compact Design • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Motor Drive • Battery Protection • Synchronous Rec

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