High Q, high self-resonant frequency

Special Features • High Q, high self-resonant frequency • High voltage application • Single layer or 3-pi universal wound • Low cost • Varnish coated • Operating temperature: phenolic -55 to +125°C iron & ferrite -55 to +105°C • Current to cause 35°C maximum temperature rise

文件：44.45 Kbytes 页数：1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

N and P-Channel Enhancement Mode Power MOSFET

Description The 4612 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features ● N-Channel VDS = 60V,ID =4.5A RDS(ON)

文件：4.42911 Mbytes 页数：8 Pages

TUOFENG

拓锋半导体

Air solenoid valve

文件：84.62 Kbytes 页数：1 Pages

FESTOFesto Corporation.

费斯托费斯托（中国）有限公司

Heyco®-Tite Brass Liquid Tight Cordgrips

文件：469.89 Kbytes 页数：1 Pages

Heyco

Heyco®-Tite Brass Liquid Tight Cordgrips

文件：87.7 Kbytes 页数：1 Pages

Heyco

丝印：4612；Package：SOP-8；Complementary Trench MOSFET

■ Features ● N-Channel : VDS (V) = 60V ID = 4.5 A (VGS = 10V) RDS(ON)

文件：2.54125 Mbytes 页数：7 Pages

KEXIN

科信电子

丝印：4612；Package：SOP-8；Complementary Trench MOSFET

■ Features ● N-Channel : VDS (V) = 60V ID = 4.5 A (VGS = 10V) RDS(ON)

文件：4.0017 Mbytes 页数：7 Pages

KEXIN

科信电子

丝印：4612；Package：SOP-8；Complementary Trench MOSFET

■ Features ● N-Channel : VDS (V) = 60V ID = 4.5 A (VGS = 10V) RDS(ON)

文件：2.54125 Mbytes 页数：7 Pages

KEXIN

科信电子

丝印：4612；Package：SOP-8；Complementary Trench MOSFET

■ Features ● N-Channel : VDS (V) = 60V ID = 4.5 A (VGS = 10V) RDS(ON)

文件：4.0017 Mbytes 页数：7 Pages

KEXIN

科信电子

丝印：4612；Package：SOP-8；N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：721.17 Kbytes 页数：5 Pages

HMSEMI

华之美半导体