丝印：443；Package：SON；Voltage Protection for 2-Series, 3-Series, or 4-Series Cell Li-Ion Batteries (Second-Level Protection)

1FEATURES • 2-Series, 3-Series, or 4-Series Cell Secondary Protection • External Capacitor-Controlled Delay Timer • Low Power Consumption I CC

文件：1.13098 Mbytes 页数：18 Pages

TI

德州仪器

丝印：443；Package：SON；Voltage Protection for 2-Series, 3-Series, or 4-Series Cell Li-Ion Batteries (Second-Level Protection)

1FEATURES • 2-Series, 3-Series, or 4-Series Cell Secondary Protection • External Capacitor-Controlled Delay Timer • Low Power Consumption I CC

文件：1.13098 Mbytes 页数：18 Pages

TI

德州仪器

丝印：443；Package：SON；Voltage Protection for 2-Series, 3-Series, or 4-Series Cell Li-Ion Batteries (Second-Level Protection)

1FEATURES • 2-Series, 3-Series, or 4-Series Cell Secondary Protection • External Capacitor-Controlled Delay Timer • Low Power Consumption I CC

文件：1.13098 Mbytes 页数：18 Pages

TI

德州仪器

丝印：443；Package：SON；Voltage Protection for 2-Series, 3-Series, or 4-Series Cell Li-Ion Batteries (Second-Level Protection)

1FEATURES • 2-Series, 3-Series, or 4-Series Cell Secondary Protection • External Capacitor-Controlled Delay Timer • Low Power Consumption I CC

文件：1.13098 Mbytes 页数：18 Pages

TI

德州仪器

丝印：4435；Package：SOP-8；P-Channel Enhancement Mode Power MOSFET

Description The 4435 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.13444 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：4430；Package：SOP-8；N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 18 A (VGS = 10V) ● RDS(ON)

文件：1.21507 Mbytes 页数：4 Pages

KEXIN

科信电子

丝印：4430；Package：SOP-8；N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 18 A (VGS = 10V) ● RDS(ON)

文件：1.80181 Mbytes 页数：4 Pages

KEXIN

科信电子

丝印：4430；Package：SO-8；N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4430/L uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity, body diode characteristics and ultra-low gate resistance. This device is ideally suited for use as a low side switch in Notebook CPU core power conversion. AO4430 and AO4430

文件：284.28 Kbytes 页数：5 Pages

AOSMD

万国半导体

丝印：4435A；Package：SOP-8；P-Channel Enhancement Mode Power MOSFET

GENERAL FEATURES @ Vos =-30Vio=-9A @ Ros(on = 20m@Ves=10V @ Ros(on = 35mO@Ves=4.5V

文件：2.88112 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

丝印：4438；Package：SOP-8；N-Channel MOSFET

■ Features ● VDS (V) = 60V ● ID = 8.2 A (VGS = 10V) ● RDS(ON)

文件：1.26337 Mbytes 页数：4 Pages

KEXIN

科信电子