丝印：4430；Package：SOP-8；N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 18 A (VGS = 10V) ● RDS(ON)

文件：1.80181 Mbytes 页数：4 Pages

KEXIN

科信电子

N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4430/L uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity, body diode characteristics and ultra-low gate resistance. This device is ideally suited for use as a low side switch in Notebook CPU core power conversion. AO4430 and AO4430

文件：284.28 Kbytes 页数：5 Pages

AOSMD

万国半导体

Simple Drive Requirement, Fast Switching Characteristic

文件：255.17 Kbytes 页数：5 Pages

A-POWER

富鼎先进电子

Ultra_Low On-resistance, Simple Drive Requirement

文件：99.22 Kbytes 页数：4 Pages

A-POWER

富鼎先进电子