丝印：4435；Package：SOP-8；P-Channel Enhancement Mode Power MOSFET

Description The 4435 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.13444 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

P-Channel 30-V (D-S) MOSFET

FEATURES
TrenchFET Power MOSFET
Advanced High Cell Density Process
Lead (Pb)-Free Version is RoHS Compliant APPLICATIONS
Load Switches
Battery Switch

文件：88.51 Kbytes 页数：5 Pages

TUOFENG

拓锋半导体

P-channel Enhancement Mode MOSFET

GENERAL FEATURES RDS(ON)

文件：1.5371 Mbytes 页数：5 Pages

CXW

诚芯微科技

P-Channel MOSFET

Plastic-Encapsulate Mosfets FEATURES • Advanced Trench Process Technology • High Density Cell Design for Ultra Low On-Resistance • VDS=-30V,ID=-8A • RDS(on) (m-ohm) 0.020 @ VGS = - 10V ,ID= -8A 0.030 @ VGS = -4.5V,ID= -5A APPLICATIONS • Load Switches • B

文件：606.1 Kbytes 页数：5 Pages

HOTTECH

合科泰

ARX4435 Transceiver for Macair H009 Specification

General Description The Aeroflex Laboratories Incorporated model ARX4435 and ARX4435FP are new generation monolithic transceivers which provides compliance with Macair H009 data bus requirements. The model ARX4435 and ARX4435FP perform the front-end analog function of inputting and outputtin

文件：76.57 Kbytes 页数：6 Pages

AEROFLEX

DELAY MODULES,TTL,SURFACE MOUNTED

文件：137.17 Kbytes 页数：1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

P-Channel 30-V (D-S) MOSFET

文件：1.00935 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

P-Channel MOSFET

Plastic-Encapsulate MosfetsFEATURES\n• Advanced Trench Process Technology\n• High Density Cell Design for Ultra Low On-Resistance\n• VDS=-30V,ID=-8A\n• RDS(on) (m-ohm)\n   0.020 @ VGS = - 10V ,ID= -8A\n   0.030 @ VGS = -4.5V,ID= -5A\n  \nAPPLICATIONS\n• Load Switches\n• Battery Switch • Advanced Trench Process Technology\n• High Density Cell Design for Ultra Low On-Resistance\n• VDS=-30V,ID=-8A\n• RDS(on) (m-ohm)\n   0.020 @ VGS = - 10V ,ID= -8A\n   0.030 @ VGS = -4.5V,ID= -5A\n  ;

HOTTECH

合科泰

丝印：4435；Package：SOP-8；P-Channel MOSFET

Description The enhancement mode MOS is extremely high density cell and low on-resistance.

文件：633.47 Kbytes 页数：5 Pages

GWSEMI

唯圣电子

Trench Mosfet

GOFORD

谷峰半导体