AO4420

N-ChannelEnhancementModePowerMOSFET

Features VDS=20V,ID=10A RDS(ON)

AO4420A

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAO4420AusesadvancedtrenchtechnologytoprovideexcellentRDS(ON),shoot-throughimmunityandbodydiodecharacteristics.ThisdeviceissuitableforuseasasynchronousswitchinPWMapplications.StandardProductAO4420AisPb-free(meetsROHS&Sony259specifica

AO4420A

N-Channel20V(D-S)MOSFET

FEATURES •Halogen-free •TrenchFET®PowerMOSFET •OptimizedforHigh-SideSynchronous RectifierOperation •100RgTested •100UISTested APPLICATIONS •NotebookCPUCore -High-SideSwitch

AO4420A

30VN-ChannelMOSFET

AO4420-HF

N-ChannelMOSFET

AO4420L

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAO4420usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),shoot-throughimmunityandbodydiodecharacteristics.ThisdeviceissuitableforuseasasynchronousswitchinPWMapplications.AO4420Lisofferedinalead-freepackage.AO4420L(GreenProduct)iso

AON4420L

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAON4420LcombinesadvancedtrenchMOSFETtechnologywithasmallfootprintpackagetoprovidelowRDS(ON)perunitarea.Thisdeviceisidealforloadswitchandhighspeedswitchingapplications. -RoHSCompliant -HalogenFree Features VDS(V)=30V ID=10A(

AP4420GH

LowerGateCharge,SimpleDriveRequirement

AP4420GJ

LowerGateCharge,SimpleDriveRequirement

APM4420

N-ChannelEnhancementModeMOSFET

Features •30V/12.5A, RDS(ON)=6mΩ(typ.)@VGS=10V RDS(ON)=10mΩ(typ.)@VGS=4.5V •SuperHighDenseCellDesignfor ExtremelyLowRDS(ON) •ReliableandRugged •SO-8Package Applications •PowerManagementinNotebookComputer, PortableEquipmentandBatteryPowered Syst