丝印：4418；Package：SOP-8；N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 11.5 A (VGS = 20V) ● RDS(ON)

文件：1.28242 Mbytes 页数：4 Pages

KEXIN

科信电子

丝印：4418；Package：SOP-8；N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 11.5 A (VGS = 20V) ● RDS(ON)

文件：1.47482 Mbytes 页数：4 Pages

KEXIN

科信电子

丝印：4411；Package：SOP-8；MOSFET

Features - Low on-resistance. - Fast switching speed. - Simple drive requirement.

文件：542.34 Kbytes 页数：6 Pages

COMCHIP

典琦

丝印：4410Z；Package：TO-263；100 V N-Channel MOSFET

Benefits * Improved Gate, Avalanche and Dynamic dV/dt Ruggedness * Fully Characterized Capacitance and Avalanche SOA * Enhanced body diode dV/dt and dI/dt Capability * Lead-Free * RoHS Compliant, Halogen-Free * VDS =100V * ID(at VGS=10V)=97A * RDS(ON) (at VGS=10V)

文件：531.62 Kbytes 页数：9 Pages

UMW

友台半导体

丝印：4418；Package：SOP-8；N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 11.5 A (VGS = 20V) ● RDS(ON)

文件：1.28242 Mbytes 页数：4 Pages

KEXIN

科信电子

丝印：4418；Package：SOP-8；N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 11.5 A (VGS = 20V) ● RDS(ON)

文件：1.47482 Mbytes 页数：4 Pages

KEXIN

科信电子

丝印：4410；Package：DFN3333-8L；30V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V,ID@10A

文件：442.5 Kbytes 页数：7 Pages

PANJIT

強茂

丝印：4410；Package：DFN3333-8L；30V N-Channel Enhancement Mode MOSFET

Features RDS(ON), VGS@10V,ID@10A

文件：515.5 Kbytes 页数：7 Pages

PANJIT

強茂

丝印：4411；Package：DFN3333-8L；20V P-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@-4.5V,ID@-8A

文件：571.49 Kbytes 页数：7 Pages

PANJIT

強茂

丝印：4411；Package：DFN3333-8L；20V P-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@-4.5V,ID@-8A

文件：645.22 Kbytes 页数：7 Pages

PANJIT

強茂