丝印：40T；Package：U-DFN1610-2；ONE CHANNEL HIGH SURGE TVS DIODE

Features • Provides ESD Protection per IEC 61000-4-2 Standard: Air ±30kV, Contact ±30kV • One Channel of ESD Protection • Low Channel Input Capacitance • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • For automotive applications

文件：285.48 Kbytes 页数：5 Pages

DIODES

美台半导体

丝印：40T；Package：SOT-23；LOW DROPOUT VOLTAGE REGULATOR

文件：114.97 Kbytes 页数：15 Pages

Toko

丝印：40T120FDS；Package：TO-247；High speed FieldStop Trench IGBT

General Description This IGBT is produced using advanced MagnaChip’s Field Stop Trench IGBT Technology, which provides low VCE(SAT), high switching performance and excellent quality. This device is for PFC, UPS & Inverter applications. Features  High Speed Switching & Low Power Loss  VC

文件：1.27912 Mbytes 页数：8 Pages

MGCHIP

丝印：40T65FDSC；Package：TO-247；650V Field Stop IGBT

General Description This IGBT is produced using advanced MagnaChip’s Field Stop Trench IGBT Technology, which provides high switching series and excellent quality. This device is for PFC, UPS & Inverter applications. Features  High Speed Switching & Low Power Loss  V = 1.95V @ I = 40A

文件：1.5971 Mbytes 页数：9 Pages

MGCHIP

丝印：40T65SQDN；Package：D2PAK；IGBT for Automotive Applications, 650 V, 40 A, D2PAK

文件：271.44 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

丝印：40T65SQ；Package：TO-247-3L；Field Stop Trench IGBT 40A, 650V

文件：255.16 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

丝印：40T65SQD；Package：TO-247-3L；Field Stop Trench IGBT 40A, 650V

文件：268.72 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

丝印：40T03GH；Package：TO-252；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：237.05 Kbytes 页数：4 Pages

A-POWER

富鼎先进电子

丝印：40T03GH；Package：TO-252；Fast Switching Characteristic

文件：106.08 Kbytes 页数：5 Pages

A-POWER

富鼎先进电子

丝印：40T03GJ；Package：TO-251；Fast Switching Characteristic

文件：106.08 Kbytes 页数：5 Pages

A-POWER

富鼎先进电子