Planar Power MOSFET (N-CH)

UTC

友顺

HiPerFET Power MOSFETs Q-Class

N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Features • International Standard Packages • Low Intrinsic Gate Resistance • Low Package Inductance • Fast Intrinsic Rectifier • Low RDS(on) and QG Applications • DC-DC Converters • Battery Chargers • Switch-Mode and Resonan

文件：52.15 Kbytes 页数：2 Pages

IXYS

艾赛斯

HiPerFET Power MOSFETs Q-Class

N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Features • International Standard Packages • Low Intrinsic Gate Resistance • Low Package Inductance • Fast Intrinsic Rectifier • Low RDS(on) and QG Applications • DC-DC Converters • Battery Chargers • Switch-Mode and Resonan

文件：52.15 Kbytes 页数：2 Pages

IXYS

艾赛斯

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Features • Ultrafast body diode • Rugged polysilicon gate cell structure • Increased Unclamped Inductive Switching (UIS) capability • Hermetically sealed, surface mount power package • Low package inductance • Very low thermal resistance • Reverse polarity available upon request

文件：48.41 Kbytes 页数：2 Pages

MICROSEMI

美高森美