丝印：402；Package：SOT363；NP-Channel Enhancement Mode MOSFET

Features Low on-resistance Low gate threshold voltage Low input capacitance Fast switching speed Halogen free

文件：2.87529 Mbytes 页数：6 Pages

TECHPUBLIC

台舟电子

丝印：402；Package：SOT-26；LED Drive Application.

文件：156.44 Kbytes 页数：3 Pages

FS

丝印：402；Package：WCSP6E；External FET Driver IC

文件：532.35 Kbytes 页数：13 Pages

TOSHIBA

东芝

丝印：402XY；Package：SOT23-3L；Transient Voltage Suppressing Device For ESD/Transient Protection

Features
ESD Protect for 2 Lines with Unidirectional
ESD Protect for 1 Line with Bidirectional
Provide ESD protection for a line to IEC 61000-4-2 (ESD) ±26kV (air) IEC 61000-4-2 (ESD) ±20kV (contact) IEC 61000-4-4 (EFT) 60A (5/50ns)
Suitable for, 12V and below, operating voltage ap

文件：212.32 Kbytes 页数：8 Pages

AMAZING

晶焱科技

丝印：4021SN；Package：SO8；20 V, 7.5 A NPN/NPN low VCEsat (BISS) transistor

Features and benefits * Very low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional tr

文件：854.4 Kbytes 页数：15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：4021SP；Package：SO8；20 V, 6.3 A PNP/PNP low VCEsat (BISS) transistor

General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package. Features and benefits ■ Low collector-emitter saturation voltage VCEsat ■ High collector current capability IC and ICM ■ High col

文件：1.08979 Mbytes 页数：15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：4021SPN；Package：SO8；20 V NPN/PNP low VCEsat (BISS) transistor

Features and benefits * Very low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional tr

文件：874.03 Kbytes 页数：20 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：40200M；Package：SOIC；WIDE-INPUT-RANGE NONSYNCHRONOUS VOLTAGE-MODE CONTROLLER

1FEATURES • Controlled Baseline – One Assembly/Test Site, One Fabrication Site • Extended Temperature Performance of –55°C to 125°C • Enhanced Diminishing Manufacturing Sources (DMS) Support • Enhanced Product-Change Notification • Qualification Pedigree (1) • Input Voltage Range 4.5 V t

文件：898.73 Kbytes 页数：44 Pages

TI

德州仪器

丝印：40200M；Package：SOIC；WIDE-INPUT-RANGE NONSYNCHRONOUS VOLTAGE-MODE CONTROLLER

1FEATURES • Controlled Baseline – One Assembly/Test Site, One Fabrication Site • Extended Temperature Performance of –55°C to 125°C • Enhanced Diminishing Manufacturing Sources (DMS) Support • Enhanced Product-Change Notification • Qualification Pedigree (1) • Input Voltage Range 4.5 V t

文件：898.73 Kbytes 页数：44 Pages

TI

德州仪器

丝印：40200M；Package：SOIC；WIDE-INPUT-RANGE NONSYNCHRONOUS VOLTAGE-MODE CONTROLLER

1FEATURES • Controlled Baseline – One Assembly/Test Site, One Fabrication Site • Extended Temperature Performance of –55°C to 125°C • Enhanced Diminishing Manufacturing Sources (DMS) Support • Enhanced Product-Change Notification • Qualification Pedigree (1) • Input Voltage Range 4.5 V t

文件：898.73 Kbytes 页数：44 Pages

TI

德州仪器