BSS8402DW

Marking：402；Package：SOT363；NP-Channel Enhancement Mode MOSFET

Features Lowon-resistance Lowgatethresholdvoltage Lowinputcapacitance Fastswitchingspeed Halogenfree

FCR402

Marking：402；Package：SOT-26；LED Drive Application.

TCK402G

Marking：402；Package：WCSP6E；External FET Driver IC

AZ4012-02S

Marking：402XY；Package：SOT23-3L；Transient Voltage Suppressing Device For ESD/Transient Protection

Features
ESDProtectfor2LineswithUnidirectional
ESDProtectfor1LinewithBidirectional
ProvideESDprotectionforalineto IEC61000-4-2(ESD)±26kV(air) IEC61000-4-2(ESD)±20kV(contact) IEC61000-4-4(EFT)60A(5/50ns)
Suitablefor,12Vandbelow,operating voltageap

PBSS4021SN

Marking：4021SN；Package：SO8；20 V, 7.5 A NPN/NPN low VCEsat (BISS) transistor

Featuresandbenefits *Verylowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltr

PBSS4021SP

Marking：4021SP；Package：SO8；20 V, 6.3 A PNP/PNP low VCEsat (BISS) transistor

Generaldescription PNP/PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaSOT96-1(SO8)mediumpowerSurface-MountedDevice(SMD)plasticpackage. Featuresandbenefits ■Lowcollector-emittersaturationvoltageVCEsat ■HighcollectorcurrentcapabilityICandICM ■Highcol

PBSS4021SPN

Marking：4021SPN；Package：SO8；20 V NPN/PNP low VCEsat (BISS) transistor

Featuresandbenefits *Verylowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltr

AP4024EJB

Marking：4024E；Package：TO-251S；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP4024EM

Marking：4024E；Package：SO-8；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP4028EP

Marking：4028EP；Package：TO-220；N-CHANNEL ENHANCEMENT MODE POWER MOSFET