Silicon N Channel Dual Gate MOS FET UHF / VHF RF Amplifier

Features • Low noise figure NF = 1.0 dB typ. at f = 200 MHz • High gain PG = 27.6 dB typ. at f = 200 MHz

文件：39.51 Kbytes 页数：9 Pages

HitachiHitachi Semiconductor

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Silicon N Channel Dual Gate MOS FET UHF / VHF RF Amplifier

Features • Low noise figure. NF = 1.0 dB typ. at f = 200 MHz • High gain PG = 27.6 dB typ. at f = 200 MHz

文件：159.1 Kbytes 页数：7 Pages

RENESAS

瑞萨

Silicon N Channel Dual Gate MOS FET UHF / VHF RF Amplifier

Features • Low noise figure. NF = 1.0 dB typ. at f = 200 MHz • High gain PG = 27.6 dB typ. at f = 200 MHz

文件：159.1 Kbytes 页数：7 Pages

RENESAS

瑞萨

GaAs N Channel Dual Gate MES FET UHF RF Amplifier

Features • Capable of low voltage operation (VDS = 1.5 to 3 V) • Excellent low noise characteristics (NF = 1.25 dB typ. at f = 900 MHz) • High power gain (PG = 21.0 dB typ. at f = 900 MHz)

文件：59.98 Kbytes 页数：11 Pages

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel Dual Gate MOS FET UHF / VHF RF Amplifier

HITACHI

日立

Transistors>Amplifiers/MOSFETs

Renesas

瑞萨

Silicon N Channel MOS FET

HITACHI

日立