Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier

Features • Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) • Excellent cross modulation characteristics • Capable low voltage operation; +B= 5V

文件：54.48 Kbytes 页数：9 Pages

HITACHIHitachi Semiconductor

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Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier

Features • Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) • Excellent cross modulation characteristics • Capable low voltage operation; +B= 5V

文件：183.21 Kbytes 页数：8 Pages

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Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier

HITACHI

日立

Transistors>Amplifiers/MOSFETs

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Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier

Features • Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) • Excellent cross modulation characteristics • Capable low voltage operation; +B= 5V

文件：183.21 Kbytes 页数：8 Pages

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Package：SC-82A，SOT-343；包装：管件 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：TRANS N-CH CMPAK-4

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