Si Nch Dual Gate MOS FET UHF RF LOW NOISE Amplifier

Features • Low noise characteristics; NF = 1.0 dB typ. (at f = 900 MHz) • High gain characteristics; PG = 24 dB typ. (at f = 900 MHz) • Capable low voltage operation; +B = 3.5 V • High Endurance Voltage; VDS = 6 V

文件：85.6 Kbytes 页数：8 Pages

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Si Nch Dual Gate MOS FET UHF RF LOW NOISE Amplifier

• Low noise characteristics; NF = 1.0 dB typ. (at f = 900 MHz)\n• High gain characteristics; PG = 24 dB typ. (at f = 900 MHz)\n• Capable low voltage operation; +B = 3.5 V\n• High Endurance Voltage; VDS = 6 V;

Renesas

瑞萨

Si Nch Dual Gate MOS FET UHF RF LOW NOISE Amplifier

Features • Low noise characteristics; NF = 1.0 dB typ. (at f = 900 MHz) • High gain characteristics; PG = 24 dB typ. (at f = 900 MHz) • Capable low voltage operation; +B = 3.5 V • High Endurance Voltage; VDS = 6 V

文件：85.6 Kbytes 页数：8 Pages

RENESAS

瑞萨

Si Nch Dual Gate MOS FET UHF RF LOW NOISE Amplifier

Features • Low noise characteristics; NF = 1.0 dB typ. (at f = 900 MHz) • High gain characteristics; PG = 24 dB typ. (at f = 900 MHz) • Capable low voltage operation; +B = 3.5 V • High Endurance Voltage; VDS = 6 V

文件：179.16 Kbytes 页数：8 Pages

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瑞萨