3SK324UG技术资料参数供应商报价瑞萨-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
3SK324UG	文件：85.6 Kbytes Page：8 Pages	Si Nch Dual Gate MOS FET UHF RF LOW NOISE Amplifier Features • Low noise characteristics; NF = 1.0 dB typ. (at f = 900 MHz) • High gain characteristics; PG = 24 dB typ. (at f = 900 MHz) • Capable low voltage operation; +B = 3.5 V • High Endurance Voltage; VDS = 6 V 文件：85.6 Kbytes 页数：8 Pages	RENESAS 瑞萨	RENESAS
3SK324UG	文件：179.16 Kbytes Page：8 Pages	Si Nch Dual Gate MOS FET UHF RF LOW NOISE Amplifier Features • Low noise characteristics; NF = 1.0 dB typ. (at f = 900 MHz) • High gain characteristics; PG = 24 dB typ. (at f = 900 MHz) • Capable low voltage operation; +B = 3.5 V • High Endurance Voltage; VDS = 6 V 文件：179.16 Kbytes 页数：8 Pages	RENESAS 瑞萨	RENESAS
3SK324	文件：85.6 Kbytes Page：8 Pages	Si Nch Dual Gate MOS FET UHF RF LOW NOISE Amplifier Features • Low noise characteristics; NF = 1.0 dB typ. (at f = 900 MHz) • High gain characteristics; PG = 24 dB typ. (at f = 900 MHz) • Capable low voltage operation; +B = 3.5 V • High Endurance Voltage; VDS = 6 V 文件：85.6 Kbytes 页数：8 Pages	RENESAS 瑞萨	RENESAS

更多3SK324UG供应商更新时间2025-12-23 11:00:00