Silicon N-Channel Dual Gate MOS FET UHF / VHF RF Amplifier

Features • Low noise characteristics; (NF = 1.0 dB typ. at f = 200 MHz) • High power gain characteristics ; (PG = 27.6 dB typ. at f = 200 MHz)

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HITACHIHitachi Semiconductor

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Silicon N-Channel Dual Gate MOS FET UHF / VHF RF Amplifier

文件：76.68 Kbytes 页数：7 Pages

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Silicon N-Channel Dual Gate MOS FET UHF / VHF RF Amplifier

• Low noise characteristics;\n  (NF = 1.0 dB typ. at f = 200 MHz)\n• High power gain characteristics ;\n  (PG = 27.6 dB typ. at f = 200 MHz) ;

HITACHI

日立

Silicon N-Channel Dual Gate MOS FET UHF / VHF RF Amplifier

Renesas

瑞萨

Silicon N-Channel Dual Gate MOS FET UHF / VHF RF Amplifier

文件：76.68 Kbytes 页数：7 Pages

RENESAS

瑞萨